Photoemission valence band spectra and electronic density of states in copper oxides and copper based ceramic super-conductors

1989 ◽  
Vol 74 (2) ◽  
pp. 173-182 ◽  
Author(s):  
P. Steiner ◽  
S. H�fner ◽  
A. Jungmann ◽  
V. Kinsinger ◽  
I. Sander
1998 ◽  
Vol 21 (3) ◽  
pp. 217-219 ◽  
Author(s):  
M. A. Grado-Caffaro ◽  
M. Grado-Caffaro

A formulation for the energy-averaged local valence band density of states of amorphous silicon carbide is derived. To this end,sp3-type hybrid orbitals are employed.


1986 ◽  
Vol 33 (4) ◽  
pp. 2370-2379 ◽  
Author(s):  
H. Winter ◽  
P. J. Durham ◽  
W. M. Temmerman ◽  
G. M. Stocks

1992 ◽  
Vol 259 ◽  
Author(s):  
A. Hughes ◽  
T-H. Shen ◽  
C.C. Matthai

ABSTRACTThe electronic density of states (DOS) for the Si(111) (√3×√3)-Sb system has been calculated using the tight binding method in the Extended Hiickel Approximation. We find that there is a gap of about 0.8eV between the valence band maximum (VBM) and a surface state. This is in contrast with the case of the unreconstructed (lxl) surface where the Fermi level lies at the surface state.


1996 ◽  
Vol 79 (8) ◽  
pp. 6367 ◽  
Author(s):  
Latika Menon ◽  
S. K. Dhar ◽  
S. K. Malik ◽  
W. B. Yelon

1992 ◽  
Vol 82 (3) ◽  
pp. 171-175 ◽  
Author(s):  
Koichi Ichimura ◽  
Kazushige Nomura ◽  
Fujio Minami ◽  
Shunji Takekawa

2007 ◽  
Vol 442 (1-2) ◽  
pp. 368-371 ◽  
Author(s):  
S. Osuchowski ◽  
H. Figiel ◽  
A. Paja

1974 ◽  
Vol 10 (12) ◽  
pp. 4889-4896 ◽  
Author(s):  
D. D. Koelling ◽  
F. M. Mueller ◽  
A. J. Arko ◽  
J. B. Ketterson

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