Formation and Physical Properties of h-BN Atomic Layers: A First-Principles Density-Functional Study
2017 ◽
Vol 2017
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pp. 1-6
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Keyword(s):
Hexagonal boron nitride (h-BN) atomic layers have attracted much attention as a potential device material for future nanoelectronics, optoelectronics, and spintronics applications. This review aims to describe the recent works of the first-principles density-functional study on h-BN layers. We show physical properties induced by introduction of various kinds of defects in h-BN layers. We further discuss the relationship among the defect size, the strain, and the magnetic as well as the electronic properties.
Keyword(s):
2016 ◽
Vol 759
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pp. 012042
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2017 ◽
Vol 109
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pp. 23-30
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Keyword(s):
Keyword(s):
2019 ◽
Vol 18
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pp. e00354
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