scholarly journals Density functional study on the electronic and magnetic properties of two-dimensional hexagonal boron nitride containing vacancy

2013 ◽  
Vol 62 (20) ◽  
pp. 203101
Author(s):  
Wei Zhe ◽  
Yuan Jian-Mei ◽  
Li Shun-Hui ◽  
Liao Jian ◽  
Mao Yu-Liang
RSC Advances ◽  
2021 ◽  
Vol 11 (30) ◽  
pp. 18371-18380
Author(s):  
Erik Bhekti Yutomo ◽  
Fatimah Arofiati Noor ◽  
Toto Winata

The number of dopant atoms is a parameter that can effectively tune the electronic and magnetic properties of graphitic and pyridinic N-doped graphene.


AIP Advances ◽  
2015 ◽  
Vol 5 (7) ◽  
pp. 077187 ◽  
Author(s):  
Ruiqi Huang ◽  
Sanjun Wang ◽  
Qingxia Wang ◽  
Xiaolin Cai ◽  
Chong Li ◽  
...  

2017 ◽  
Vol 2017 ◽  
pp. 1-6 ◽  
Author(s):  
Yoshitaka Fujimoto

Hexagonal boron nitride (h-BN) atomic layers have attracted much attention as a potential device material for future nanoelectronics, optoelectronics, and spintronics applications. This review aims to describe the recent works of the first-principles density-functional study on h-BN layers. We show physical properties induced by introduction of various kinds of defects in h-BN layers. We further discuss the relationship among the defect size, the strain, and the magnetic as well as the electronic properties.


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