Effect of Buffer Thickness on Single-Walled Carbon Nanotube Growth Using Aluminum Oxide Buffer Layer with Alcohol Gas Source Method

2010 ◽  
Vol 10 (6) ◽  
pp. 3929-3933 ◽  
Author(s):  
Kuniori Sato ◽  
Tomoyuki Shiraiwa ◽  
Takahiro Maruyama ◽  
Shigeya Naritsuka
2013 ◽  
Vol 52 (6S) ◽  
pp. 06GD02 ◽  
Author(s):  
Hiroki Kondo ◽  
Naoya Fukuoka ◽  
Ranajit Ghosh ◽  
Shigeya Naritsuka ◽  
Takahiro Maruyama ◽  
...  

2009 ◽  
Vol 1204 ◽  
Author(s):  
Kuninori Sato ◽  
Takahiro Maruyama ◽  
Shigeya Naritsuka

AbstractAluminum oxide (Al2Ox) buffer layers were employed to grow single-walled carbon nanotubes (SWNTs) at 400°C using an alcohol gas source and a Co catalyst. By optimizing the thickness of the aluminum oxide layer, the SWNT yield was enhanced by a factor of several times. In addition, SWNT growth at 350°C was realized on the Al2Ox buffer layer by this method. Raman measurements at various excitation wavelengths suggest that a Al2Ox buffer layer preferentially enhances the growth of SWNTs with larger diameters (>1 nm).


2011 ◽  
Vol 1 (4) ◽  
pp. 267-272 ◽  
Author(s):  
Takahiro Maruyama ◽  
Yoshihiro Mizutani ◽  
Shigeya Naritsuka ◽  
Sumio Iijima

AIP Advances ◽  
2021 ◽  
Vol 11 (4) ◽  
pp. 045306
Author(s):  
Georg Daniel Förster ◽  
Thomas D. Swinburne ◽  
Hua Jiang ◽  
Esko Kauppinen ◽  
Christophe Bichara

2013 ◽  
Vol 139 (5) ◽  
pp. 054308 ◽  
Author(s):  
S. Haghighatpanah ◽  
A. Mohsenzadeh ◽  
H. Amara ◽  
C. Bichara ◽  
K. Bolton

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