Enhancement of Single-Walled Carbon Nanotube Formation Using Aluminum Oxide Buffer Layer in Alcohol Gas Source Method

2008 ◽  
Author(s):  
Takahiro Maruyama ◽  
Tomoyuki Shiraiwa ◽  
Kuninori Sato ◽  
Shigeya Naritsuka
Keyword(s):  
Carbon Nanotube ◽  
Aluminum Oxide ◽  
Buffer Layer ◽  
Single Walled Carbon Nanotube ◽  
Single Walled Carbon ◽  
Source Method ◽  
Gas Source

Low-Temperature Single-Walled Carbon Nanotube Growth from Pt Catalyst Using Alcohol Gas Source Method in High Vacuum

2013 ◽  
Vol 52 (6S) ◽  
pp. 06GD02 ◽  
Author(s):  
Hiroki Kondo ◽  
Naoya Fukuoka ◽  
Ranajit Ghosh ◽  
Shigeya Naritsuka ◽  
Takahiro Maruyama ◽  
...  
Keyword(s):  
Carbon Nanotube ◽  
Low Temperature ◽  
High Vacuum ◽  
Pt Catalyst ◽  
Single Walled Carbon Nanotube ◽  
Single Walled Carbon ◽  
Source Method ◽  
Gas Source ◽  
Carbon Nanotube Growth ◽  
Nanotube Growth

Single-Walled Carbon Nanotube Growth using Al2Ox Buffer Layer at Low Temperature by Alcohol Gas Source Method

2009 ◽  
Vol 1204 ◽  
Author(s):  
Kuninori Sato ◽  
Takahiro Maruyama ◽  
Shigeya Naritsuka
Keyword(s):  
Aluminum Oxide ◽  
Buffer Layer ◽  
Buffer Layers ◽  
Single Walled Carbon Nanotube ◽  
Single Walled Carbon ◽  
Gas Source ◽  
Aluminum Oxide Layer ◽  
Carbon Nanotube Growth ◽  
Nanotube Growth ◽  
Walled Carbon Nanotubes

AbstractAluminum oxide (Al2Ox) buffer layers were employed to grow single-walled carbon nanotubes (SWNTs) at 400°C using an alcohol gas source and a Co catalyst. By optimizing the thickness of the aluminum oxide layer, the SWNT yield was enhanced by a factor of several times. In addition, SWNT growth at 350°C was realized on the Al2Ox buffer layer by this method. Raman measurements at various excitation wavelengths suggest that a Al2Ox buffer layer preferentially enhances the growth of SWNTs with larger diameters (>1 nm).

Single-Walled Carbon Nanotube Growth with Narrow Diameter Distribution from Pt Catalysts by Alcohol Gas Source Method

2014 ◽  
Vol 1659 ◽  
pp. 107-112
Author(s):  
Hiroki Kondo ◽  
Ranajit Ghosh ◽  
Shigeya Naritsuka ◽  
Takahiro Maruyama ◽  
Sumio Iijima
Keyword(s):  
Carbon Nanotube ◽  
Growth Temperature ◽  
High Vacuum ◽  
Small Diameter ◽  
Vacuum System ◽  
Pt Catalysts ◽  
Single Walled Carbon Nanotube ◽  
Single Walled Carbon ◽  
Source Method ◽  
Gas Source

ABSTRACTSingle-walled carbon nanotube (SWCNT) growth were carried out on SiO2/Si substrates using Pt catalysts at different temperatures, from 400°C to 700°C, under various ethanol pressures by an alcohol gas source method, a type of cold-wall chemical vapor deposition (CVD). Raman measurements showed that the optimal ethanol pressure decreased as the growth temperature was reduced, and that SWCNTs grew even at 400°C by optimizing the ethanol pressure to 1×10-5 Pa in a high vacuum system. Compared to the SWCNTs grown from Co catalysts, the diameters of SWCNTs grown from Pt were smaller, irrespective of the growth temperature. In addition, both the SWCNT diameter and the distribution became narrower by reducing the growth temperature and we obtained small-diameter SWCNTs of which the diameters were less than 1 nm using Pt catalysts.

Single-Walled Carbon Nanotube Growth in High Vacuum Using Pt Catalyst in Alcohol Gas Source Method

2011 ◽  
Vol 1 (4) ◽  
pp. 267-272 ◽  
Author(s):  
Takahiro Maruyama ◽  
Yoshihiro Mizutani ◽  
Shigeya Naritsuka ◽  
Sumio Iijima
Keyword(s):  
Carbon Nanotube ◽  
High Vacuum ◽  
Pt Catalyst ◽  
Single Walled Carbon Nanotube ◽  
Single Walled Carbon ◽  
Source Method ◽  
Gas Source ◽  
Carbon Nanotube Growth ◽  
Nanotube Growth
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