Phase stability, defects and deformation mechanisms in the “exotic” intermetallic compounds Nb3Al and Cr2Nb

Author(s):  
M Aindow ◽  
AV Kazantzis ◽  
LS Smith
1997 ◽  
Vol 18 (6) ◽  
pp. 536-543 ◽  
Author(s):  
F. Chu ◽  
T. E. Mitchell ◽  
S. P. Chen ◽  
M. Sob ◽  
R. Siegl ◽  
...  

2002 ◽  
Vol 50 (9) ◽  
pp. 2233-2243 ◽  
Author(s):  
K Ishikawa ◽  
R Kainuma ◽  
I Ohnuma ◽  
K Aoki ◽  
K Ishida

1989 ◽  
Vol 148 ◽  
Author(s):  
Young K. Kim ◽  
David K. Shuh ◽  
R. Stanley Williams ◽  
Larry P. Sadwick ◽  
Kang L. Wang

ABSTRACTEpitaxial thin films of three different Pt-Ga intermetallic compounds have been grown on GaAs by molecular beam epitaxy (MBE). The resultant films have been annealed at various temperatures and then examined using X-ray two-theta diffraction. Both PtGa2 and PtGa thin films are chemically stable on GaAs under 1 atmosphere of N2 up to 450°C and 600°C, respectively. Thin films of Pt2Ga react with GaAs at temperatures as low as 200°C to form phases with higher Ga concentration.


Sign in / Sign up

Export Citation Format

Share Document