High-Power GaN HEMT for Cellular Base Stations

2016 ◽  
pp. 303-336
Author(s):  
Norihiko Ui
Keyword(s):  
High Power ◽  
Base Stations ◽  
Gan Hemt

On the Challenge of Over-The-Air Measurements of High-Power Massive MIMO Radio Base Stations

2021 ◽  
Author(s):  
Adam Tankielun ◽  
Gerd Saala ◽  
Sebastian Schmitz ◽  
Hendrik Bartko ◽  
Benoit Derat ◽  
...  
Keyword(s):  
High Power ◽  
Massive Mimo ◽  
Base Stations

10W Class High Power C-Band Rectifier Using GaN HEMT

2019 ◽  
Author(s):  
Satoshi Yoshida ◽  
Kenjiro Nishikawa ◽  
Shigeo Kawasaki
Keyword(s):  
High Power ◽  
Gan Hemt

A 83-W, 51% GaN HEMT Doherty power amplifier for 3.5-GHz-band LTE base stations

2016 ◽  
Author(s):  
Katsuya Kato ◽  
Shinichi Miwa ◽  
Eri Teranishi ◽  
Naoki Kosaka ◽  
Kazunobu Fujii ◽  
...  
Keyword(s):  
Power Amplifier ◽  
Base Stations ◽  
Gan Hemt ◽  
Doherty Power Amplifier

EXTRACTION OF GATE CAPACITANCE OF HIGH-FREQUENCY AND HIGH-POWER GaN HEMTs BY MEANS OF CELLULAR MONTE CARLO SIMULATIONS

2011 ◽  
Vol 20 (03) ◽  
pp. 423-430
Author(s):  
DIEGO GUERRA ◽  
FABIO ALESSIO MARINO ◽  
STEPHEN GOODNICK ◽  
DAVID FERRY ◽  
MARCO SARANITI
Keyword(s):  
Monte Carlo ◽  
High Power ◽  
High Frequency ◽  
Small Signal ◽  
Small Signal Analysis ◽  
Gan Hemt ◽  
Full Band ◽  
Cellular Monte Carlo ◽  
Dc Characterization

A high-frequency a high-power GaN HEMT was analyzed using our full band Cellular Monte Carlo (CMC) simulator, in order to extract small signal parameters and figures of merit, and to correlate them to carrier dynamics and distribution inside the device. A complete RF and DC characterization of the device was performed using experimental data to calibrate the few adjustable parameters of the simulator. Then, gate-related capacitances, such as Cg, Cgd, and Cgs, were directly and indirectly extracted combining small-signal analysis and DC characterization.

Polarization dependent analysis of AlGaN/GaN HEMT for high power applications

2007 ◽  
Vol 51 (1) ◽  
pp. 130-135 ◽  
Author(s):  
Parvesh Gangwani ◽  
Sujata Pandey ◽  
Subhasis Haldar ◽  
Mridula Gupta ◽  
R.S. Gupta
Keyword(s):  
High Power ◽  
Gan Hemt

An improved DRBL AlGaN/GaN HEMT with high power added efficiency

2019 ◽  
Vol 89 ◽  
pp. 212-215 ◽  
Author(s):  
Hujun Jia ◽  
Shunwei Zhu ◽  
Mei Hu ◽  
Yibo Tong ◽  
Tao Li ◽  
...  
Keyword(s):  
High Power ◽  
Power Added Efficiency ◽  
Gan Hemt
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