Research progress in the epitaxial growth of silicon-based group IV materials, and their light emitters and photodetectors

2021 ◽  
Vol 51 (3) ◽  
pp. 030005
Author(s):  
Lu ZHANG ◽  
ShaoYing KE ◽  
JianYuan WANG ◽  
Wei HUANG ◽  
SongYan CHEN ◽  
...  
2021 ◽  
Vol 1036 ◽  
pp. 35-44
Author(s):  
Ling Fang Ruan ◽  
Jia Wei Wang ◽  
Shao Ming Ying

Silicon-based anode materials have been widely discussed by researchers because of its high theoretical capacity, abundant resources and low working voltage platform,which has been considered to be the most promising anode materials for lithium-ion batteries. However,there are some problems existing in the silicon-based anode materials greatly limit its wide application: during the process of charge/discharge, the materials are prone to about 300% volume expansion, which will resultin huge stress-strain and crushing or collapse on the anods; in the process of lithium removal, there is some reaction between active material and current collector, which creat an increase in the thickness of the solid phase electrolytic layer(SEI film); during charging and discharging, with the increase of cycle times, cracks will appear on the surface of silicon-based anode materials, which will cause the batteries life to decline. In order to solve these problems, firstly, we summarize the design of porous structure of nanometer sized silicon-based materials and focus on the construction of three-dimensional structural silicon-based materials, which using natural biomass, nanoporous carbon and metal organic framework as structural template. The three-dimensional structure not only increases the channel of lithium-ion intercalation and the rate of ion intercalation, but also makes the structure more stable than one-dimensional or two-dimensional. Secondly, the Si/C composite, SiOx composite and alloying treatment can improve the volume expansion effection, increase the rate of lithium-ion deblocking and optimize the electrochemical performance of the material. The composite materials are usually coated with elastic conductive materials on the surface to reduce the stress, increase the conductivity and improve the electrochemical performance. Finally, the future research direction of silicon-based anode materials is prospected.


2021 ◽  
Vol 2076 (1) ◽  
pp. 012060
Author(s):  
Xiaoyu Yang ◽  
Ling Tong ◽  
Lin Wu ◽  
Baoguo Zhang ◽  
Zhiyuan Liao ◽  
...  

Abstract Silicon nanostructures are attracting growing attention due to their properties and promising application prospects in solar energy conversion and storage devices, thermoelectric devices, lithium-ion batteries, and biosensing technologies. The large-scale and low-cost preparation of silicon nanostructures is critical for silicon-based advanced functional devices commercialization. In this paper, the feasibility and mechanism of silicon nanostructure fabricated by non-metallic carbon catalytic etching, as well as the currently existing problems and future development trend are reviewed.


2021 ◽  
Vol 104 (23) ◽  
Author(s):  
M. U. Muzaffar ◽  
Xue-Sen Wang ◽  
Shunhong Zhang ◽  
Ping Cui ◽  
Zhenyu Zhang

2020 ◽  
Vol 13 (1) ◽  
pp. 62-74
Author(s):  
朱晓秀 ZHU Xiao-xiu ◽  
葛 咏 GE Yong ◽  
李建军 LI Jian-jun ◽  
赵跃进 ZHAO Yue-jin ◽  
邹炳锁 ZOU Bing-suo ◽  
...  

2009 ◽  
Vol 6 (3) ◽  
pp. 707-715 ◽  
Author(s):  
Martin Kittler ◽  
Teimuraz Mchedlidze ◽  
Tzanimir Arguirov ◽  
Winfried Seifert ◽  
Manfred Reiche ◽  
...  

2008 ◽  
Vol 1068 ◽  
Author(s):  
Erik Bakkers ◽  
Magnus Borgstrom ◽  
Marcel Verheijen

ABSTRACTSemiconducting nanowires are emerging as a route to combine heavily mismatched materials. The high level of control on wire dimensions and chemical composition makes them promising materials to be integrated in future silicon technologies as well as to be the active element in optoelectronic devices.In this article, we review the recent progress in epitaxial growth of nanowires on non-corresponding substrates. We highlight the advantage of using small dimensions to facilitate accommodation of the lattice strain at the surface of the structures. More specifically, we will focus on the growth of III–V nanowires on group IV substrates. This approach enables the integration of high-performance III–V semiconductors monolithically into mature silicon technology, since fundamental issues of III–V integration on Si such as lattice and thermal expansion mismatch can be overcome. Moreover, as there will only be one nucleation site per crystallite, the system will not suffer from antiphase boundaries.Issues that affect the electronic properties of the heterojunction, such as the crystallographic quality and diffusion of elements across the heterointerface will be discussed. Finally, we address potential applications of vertical III–V nanowires grown on silicon.


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