Progress in the Development of Broad-Waveguide High-Power 0.97-2.3 µm Diode Lasers and CW Room Temperature 2.3-2.7 µm Mid-Infrared lasers

1999 ◽  
Author(s):  
D. Z. Garbuzov
Keyword(s):  
High Power ◽  
Room Temperature ◽  
Diode Lasers ◽  
Infrared Lasers ◽  
Mid Infrared

MID-INFRARED GaSb-BASED LASERS WITH TYPE-I HETEROINTERFACES

2002 ◽  
Vol 12 (04) ◽  
pp. 1025-1038 ◽  
Author(s):  
D. V. DONETSKY ◽  
R. U. MARTINELLI ◽  
G. L. BELENKY
Keyword(s):  
High Power ◽  
Room Temperature ◽  
Continuous Wave ◽  
Diode Lasers ◽  
Current Mode ◽  
Pulsed Current ◽  
Device Performance ◽  
Type I ◽  
Mid Infrared ◽  
Double Heterojunction

The design of room-temperature, InGaAsSb/AlGaAsSb diode lasers has evolved from the first double-heterojunction lasers described in 1980 that operated in the pulsed-current mode to present-day continuous–wave (CW), high-power, quantum–well diode lasers. We discuss in detail recent results from type-I-heterostructure, GaSb-based CW room-temperature diode lasers. The devices operate within the wavelength range of 1.8 to 2.7 μm, providing output powers up to several Watts. We analyze the factors limiting device performance.

High-power room-temperature continuous wave operation of 2.7 and 2.8 μm In(Al)GaAsSb/GaSb diode lasers

2003 ◽  
Vol 83 (10) ◽  
pp. 1926-1928 ◽  
Author(s):  
J. G. Kim ◽  
L. Shterengas ◽  
R. U. Martinelli ◽  
G. L. Belenky
Keyword(s):  
High Power ◽  
Room Temperature ◽  
Continuous Wave ◽  
Diode Lasers ◽  
Continuous Wave Operation

Room-temperature tunable mid-infrared lasers on transition-metal doped II-VI compound crystals grown from vapor phase

2010 ◽  
Vol 247 (6) ◽  
pp. 1553-1556 ◽  
Author(s):  
V. I. Kozlovsky ◽  
V. A. Akimov ◽  
M. P. Frolov ◽  
Yu. V. Korostelin ◽  
A. I. Landman ◽  
...  
Keyword(s):  
Transition Metal ◽  
Vapor Phase ◽  
Room Temperature ◽  
Infrared Lasers ◽  
Mid Infrared ◽  
Metal Doped

Mid-infrared high-power diode lasers and modules

2010 ◽  
Author(s):  
Márc T. Kelemen ◽  
Juergen Gilly ◽  
Marcel Rattunde ◽  
Joachim Wagner ◽  
Sandra Ahlert ◽  
...  
Keyword(s):  
High Power ◽  
Diode Lasers ◽  
Mid Infrared ◽  
Power Diode

High power mid-infrared quantum cascade lasers with a molecular beam epitaxy grown InP cladding operating above room temperature

1997 ◽  
Vol 175-176 ◽  
pp. 22-28 ◽  
Author(s):  
Jérôme Faist ◽  
Federico Capasso ◽  
Carlo Sirtori ◽  
Deborah L. Sivco ◽  
James N. Baillargeon ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
High Power ◽  
Room Temperature ◽  
Molecular Beam ◽  
Quantum Cascade Lasers ◽  
Mid Infrared ◽  
Quantum Cascade ◽  
Cascade Lasers
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