Transient-Grating FROG for Measurement of Sub-10-fs to Few-ps Amplified Pulses

Author(s):  
A. S. Pirozhkov ◽  
M. Mori ◽  
K. Ogura ◽  
A. Nishimura ◽  
H. Murakami ◽  
...  
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2002 ◽  
Vol 715 ◽  
Author(s):  
P. Sanguino ◽  
M. Niehus ◽  
S. Koynov ◽  
P. Brogueira ◽  
R. Schwarz ◽  
...  

AbstractThe minority-carrier diffusion length in thin silicon films can be extracted from the electrically-detected transient grating method, EDTG, by a simple ambipolar analysis only in the case of lifetime dominated carrier transport. If the dielectric relaxation time, τdiel, is larger than the photocarrier response time, τR, then unexpected negative transient signals can appear in the EDTG result. Thin silicon films deposited by hot-wire chemical vapor deposition (HWCVD) near the amorphous-to-microcrystalline transition, where τR varies over a large range, appeared to be ideal candidates to study the interplay between carrier recombination and dielectric response. By modifying the ambipolar description to allow for a time-dependent carrier grating build-up and decay we can obtain a good agreement between analytical calculation and experimental results.


AIAA Journal ◽  
2002 ◽  
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pp. 1071-1077
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Y. Li ◽  
W. L. Roberts ◽  
M. S. Brown

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J. Rehault ◽  
P. Radi ◽  
C. Milne ◽  
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2011 ◽  
Vol 106 (24) ◽  
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Luyi Yang ◽  
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J. L. Reno ◽  
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2001 ◽  
Vol 56 (3) ◽  
pp. 407-413 ◽  
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R Torre ◽  
M Ricci ◽  
M Sampoli ◽  
C Dreyfus ◽  
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Angela Punzi ◽  
Pierre Brodard ◽  
Eric Vauthey

1999 ◽  
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H. Ooe ◽  
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N. Hirota

1989 ◽  
Vol 6 (4) ◽  
pp. 567 ◽  
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K. Woodbridge ◽  
R. J. Manning ◽  
P. K. Milsom ◽  
D. C. Hutchings ◽  
...  

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