Compositional Variation of the Dayside Martian Ionosphere: Inference from Photochemical Equilibrium Computations

The Martian ionosphere plays a crucial role in driving the interactions of the planet with solar photons and solar wind particles. The variations of the dayside Martian ionosphere with several controlling factors, including the solar extreme ultraviolet radiation, the background atmosphere, and the underlying thermal structure, have been the topic of extensive research in terms of electron distribution. In contrast, how the ionospheric composition varies has not been systematically investigated, a topic that is attempted in this study based on photochemical equilibrium computations performed at 100–200 km altitude, including a large number of reactions. Our calculations reveal the following compositional variations as natural outcomes of the ionospheric chemistry on Mars. (1) With increasing solar irradiance, the proportions of the majority of nonterminal ions are enhanced at the expense of reduced proportions of terminal ions, including O 2 + , HCO+, NO+, and H3O+. (2) At high electron temperatures, the proportion of NO+ is modestly reduced, whereas the proportions of the other species are nearly unaffected. (3) The response of the ionospheric composition to the upper atmospheric composition is complicated, showing the strong negative response of many trace ions to ambient CO2, O, and CO, as well as the strong positive response of protonated ions to H2, nitrogen-bearing ions to N and N2, water-group ions to H2O, and HO 2 + to O2. As an application of the model results, the recent ion measurements made on board the Mars Atmosphere and Volatile Evolution are used to provide hints about the realistic composition of the Martian upper atmosphere.

Multilayer Reflective Coatings for BEUV Lithography: A Review

The development of microelectronics is always driven by reducing transistor size and increasing integration, from the initial micron-scale to the current few nanometers. The photolithography technique for manufacturing the transistor needs to reduce the wavelength of the optical wave, from ultraviolet to the extreme ultraviolet radiation. One approach toward decreasing the working wavelength is using lithography based on beyond extreme ultraviolet radiation (BEUV) with a wavelength around 7 nm. The BEUV lithography relies on advanced reflective optics such as periodic multilayer film X-ray mirrors (PMMs). PMMs are artificial Bragg crystals having alternate layers of “light” and “heavy” materials. The periodicity of such a structure is relatively half of the working wavelength. Because a BEUV lithographical system contains at least 10 mirrors, the optics’ reflectivity becomes a crucial point. The increasing of a single mirror’s reflectivity by 10% will increase the system’s overall throughput six-fold. In this work, the properties and development status of PMMs, particularly for BEUV lithography, were reviewed to gain a better understanding of their advantages and limitations. Emphasis was given to materials, design concepts, structure, deposition method, and optical characteristics of these coatings.

Multilayer Reflective Coatings for BEUV Lithography: A Review

The development of microelectronics is always driven by reducing transistor size and increasing integration, from the initial micron-scale to the current few nanometers. The photolithography technique for manufacturing the transistor needs to reduce the wavelength of the optical wave, from ultraviolet, deep, to the existing extreme ultraviolet light. One approach toward decreasing the working wavelength is using lithography based on beyond extreme ultraviolet radiation (BEUV) with a wavelength around 7 nm. The BEUV lithography relies on advanced reflective optics such as periodic multilayer film X-ray mirrors (PMMs). PMMs are artificial Bragg crystals having alternate layers of “light” and “heavy” materials. The periodicity of such a structure is relatively half of the working wavelength. Since a BEUV lithographical system contains at least 10 mirrors, optics’ reflectivity becomes a crucial point. The increasing of a single mirror's reflectivity by 10% will increase the system’s overall throughput by 6 times. In this work, the properties and development status of PMMs, particularly for BEUV lithography, were reviewed to gain a better understanding of their advantages and limitations. Emphasis was given to materials, design concepts, structure, deposition method, and optical characteristics of these coatings.

Generation of Energetic Highly Elliptical Extreme Ultraviolet Radiation

In this study, the generation of energetic coherent extreme ultraviolet (XUV) radiation with the potential for controlled polarization is reported. The XUV radiation results from the process of high harmonic generation (HHG) in a gas phase atomic medium, driven by an intense two-color circularly polarized counter-rotating laser field, under loose focusing geometry conditions. The energy of the XUV radiation emitted per laser pulse is found to be of the order of ~100 nJ with the spectrum spanning from 17 to 26 eV. The demonstrated energy values (along with tight XUV focusing geometries) are sufficient to induce nonlinear processes. Our results challenge current perspectives regarding ultrafast investigations of chiral phenomena in the XUV spectral region.