Properties of Si/buried oxide (BOX) systems with bonded interface in silicon-on-insulator (SOI) wafers were studied in this paper. Results show impact of the starting Si material - Czochralski (Cz) or float-zone (Fz) grown silicon on the electron mobility (μe) and BOX charge behavior in ultrathin SOI layers. In particular, there were found: 1) the μe ~ Ne-0.3 dependencies at the electron density Ne in the range of 4х (1011-1012) cm-2 in accumulation Cz-SOI layers with the μe degradation when Si thickness decreases from 20 to 9 nm, and 2) the ~ Ne-0.6 behavior of mobility with no degradation in Fz-SOI layers. Raman spectroscopy shows the structural modification of Cz-SOI layers. An origin of degradation of the electrical and structural properties for ultrathin SOI layer is discussed.
Experimental study of the mechanisms leading to the formation of glistenings in intraocular lenses by Raman spectroscopy