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InAs quantum dot mode-locked lasers on a Si substrate by Pd-GaAs wafer bonding
Frontiers in Optics 2016
◽
10.1364/fio.2016.ff5f.5
◽
2016
◽
Author(s):
Zihao Wang
◽
Stefan Preble
◽
Micheal Fanto
◽
Jeffrey Steidle
◽
Chi-sen Lee
◽
...
Keyword(s):
Quantum Dot
◽
Wafer Bonding
◽
Si Substrate
◽
Gaas Wafer
◽
Inas Quantum Dot
◽
Mode Locked Lasers
Download Full-text
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High performance InAs quantum dot lasers on silicon substrates by low temperature Pd-GaAs wafer bonding
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10.1063/1.4938205
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Passively mode-locked InAs quantum dot lasers on a silicon substrate by Pd-GaAs wafer bonding
Applied Physics Letters
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◽
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InAs/GaAs quantum dot infrared photodetector on a Si substrate by means of metal wafer bonding and epitaxial lift-off
Optics Express
◽
10.1364/oe.25.017562
◽
2017
◽
Vol 25
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pp. 17562
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Wafer Bonding
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Infrared Photodetector
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Si Substrate
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Room temperature CW operation of 1.3um quantum dot lasers on a Si substrate by Pd-mediated wafer bonding
Advanced Photonics 2015
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10.1364/iprsn.2015.im4b.4
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2015
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Microcavity Effect in InAs/GaAs Quantum Dot Infrared Photodetector on a Si Substrate Fabricated With Metal Wafer Bonding and Epitaxial Lift-Off Techniques
IEEE Photonics Journal
◽
10.1109/jphot.2018.2890724
◽
2019
◽
Vol 11
(1)
◽
pp. 1-9
◽
Cited By ~ 2
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Ho Sung Kim
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Graphene-Quantum-Dot-Mediated Semiconductor Wafer Bonding for Photovoltaic Applications
2020 47th IEEE Photovoltaic Specialists Conference (PVSC)
◽
10.1109/pvsc45281.2020.9300676
◽
2020
◽
Author(s):
Kosuke Nishigaya
◽
Kodai Kishibe
◽
Katsuaki Tanabe
Keyword(s):
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◽
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High performance and reliable 1.3 μm InAs quantum dot lasers epitaxially grown on Si
2018 23rd Opto-Electronics and Communications Conference (OECC)
◽
10.1109/oecc.2018.8730014
◽
2018
◽
Author(s):
Daehwan Jung
◽
Robert Herrick
◽
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◽
Yating Wan
◽
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Keyword(s):
Quantum Dot
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High Performance
◽
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Inas Quantum Dot
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Transient spectroscopy of InAs quantum dot molecules
Applied Physics Letters
◽
10.1063/1.1769077
◽
2004
◽
Vol 85
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◽
pp. 284-286
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Author(s):
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◽
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Keyword(s):
Quantum Dot
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Quantum Dot Molecules
◽
Transient Spectroscopy
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Compact InP-based 1×2 MMI splitter on Si substrate with BCB wafer bonding for membrane photonic circuits
2012 International Conference on Indium Phosphide and Related Materials
◽
10.1109/iciprm.2012.6403304
◽
2012
◽
Author(s):
Jieun Lee
◽
Yoshiaki Yamahara
◽
Yuki Atsumi
◽
Takahiko Shindo
◽
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◽
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Photonic Circuits
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Control of inas quantum dot emission wavelengths in narrow regions by selective formation of GaInAs covered layers grown with in-situ mask
Digest of Papers. 2004 International Microprocesses and Nanotechnology Conference, 2004.
◽
10.1109/imnc.2004.245781
◽
2004
◽
Author(s):
S. Ohkouchi
◽
Y Nakamura
◽
H. Nakamura
◽
K. Asakawa
Keyword(s):
Quantum Dot
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Selective Formation
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