Determination of the piezo-optical properties of semiconductors above the fundamental gap by means of reflectance difference spectroscopy

1999 ◽  
Vol 16 (3) ◽  
pp. 568 ◽  
Author(s):  
D. Rönnow ◽  
L. F. Lastras-Martı́nez ◽  
M. Cardona ◽  
P. V. Santos
Author(s):  
A. Lastras-Martinez ◽  
I. Lara-Velazquez ◽  
R.e. Balderas-Navarro ◽  
J. Ortega-Gallegos ◽  
L.f. Lastras-Martinez

1996 ◽  
Vol 74 (S1) ◽  
pp. 85-88 ◽  
Author(s):  
R. Arès ◽  
C. A. Tran ◽  
S. P. Watkins

Reflectance difference spectroscopy (RDS) has been used to monitor the anisotropy of the surface of InAs and GaAs grown by atomic layer epitaxy (ALE). Saturation of the RDS signal is observed when the surface is fully covered with one monolayer of the impinging surface species. This property is used to optimize the growth interruptions for the ALE cycle. Good correlation of the RDS saturation is observed with growth-rate measurements obtained by X-ray diffraction (XRD). When exposure times are sufficiently long for saturation to be observed in the RDS signal, a growth rate of one monolayer per cycle (1 ML/cycle) is achieved. In principle all the different growth parameters such as exposure and purge times as well as gas flows can be determined in a few cycles performed on a single substrate. Without RDS the same results would require several growth runs and time consuming X-ray characterization.


2021 ◽  
Vol 136 (4) ◽  
Author(s):  
Gianlorenzo Bussetti ◽  
Lorenzo Ferraro ◽  
Alberto Bossi ◽  
Marcello Campione ◽  
Lamberto Duò ◽  
...  

Abstract Surface differential reflectivity (SDR) and reflectance anisotropy spectroscopy (RAS) [sometimes known as reflectance difference spectroscopy] are two well-known optical spectroscopies used in the investigation of surfaces and interfaces. Their adaptability on different experimental conditions (vacuum, controlled atmosphere and liquid environment) allows for the investigation not only of surface states and/or ultra-thin films but also of more complex interfaces. In these circumstances, the analysis of the sample with both techniques is decisive in view of obtaining a correct picture of the sample optical properties. In this work, we show a microelectronic hardware solution useful to control both a SDR and a RAS apparatus. We describe an electronic architecture that can be easily replicated, and we applied it to a representative sample where the interpretation of the optical properties requires an analysis by both SDR and RAS. Graphic abstract


2007 ◽  
Author(s):  
A. Lastras-Martínez ◽  
I. Lara-Velázquez ◽  
R. E. Balderas-Navarro ◽  
J. Ortega-Gallegos ◽  
L. F. Lastras-Martínez

1997 ◽  
Vol 71 (1) ◽  
pp. 87-89 ◽  
Author(s):  
Z. Yang ◽  
Y. H. Chen ◽  
Jacob Y. L. Ho ◽  
W. K. Liu ◽  
X. M. Fang ◽  
...  

2008 ◽  
Vol 5 (8) ◽  
pp. 2565-2568 ◽  
Author(s):  
A. Lastras-Martínez ◽  
I. Lara-Velázquez ◽  
R. E. Balderas-Navarro ◽  
J. Ortega-Gallegos ◽  
S. Guel-Sandoval ◽  
...  

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