scholarly journals All-optical gain optoelectronic oscillator based on a dual-frequency integrated semiconductor laser: potential to break the bandwidth limitation in the traditional OEO configuration

2021 ◽  
Vol 29 (2) ◽  
pp. 1064
Author(s):  
Jin Li ◽  
Tao Pu ◽  
Jilin Zheng ◽  
Yunshan Zhang ◽  
Yuechun Shi ◽  
...  
Keyword(s):  
Semiconductor Laser ◽  
Optical Gain ◽  
Dual Frequency ◽  
Optoelectronic Oscillator ◽  
All Optical ◽  
Bandwidth Limitation

Delay-line optoelectronic oscillator with all-optical gain

2016 ◽  
Author(s):  
K. Mikitchuk ◽  
A. Chizh ◽  
S. Malyshev
Keyword(s):  
Delay Line ◽  
Optical Gain ◽  
Optoelectronic Oscillator ◽  
All Optical

scholarly journals Optically-Injected-Semiconductor-Laser-Based Tunable Dual-Frequency Optoelectronic Oscillator under Subharmonic Microwave Modulation

2021 ◽  
Vol 11 (9) ◽  
pp. 3961
Author(s):  
Jiayi Zhao ◽  
Yiying Gu ◽  
Jian Li ◽  
Xiaozhou Li ◽  
Mingshan Zhao ◽  
...  
Keyword(s):  
Phase Noise ◽  
Semiconductor Laser ◽  
Frequency Offset ◽  
Optical Injection ◽  
Dual Frequency ◽  
Optoelectronic Oscillator ◽  
Mode Suppression ◽  
Microwave Signals ◽  
Microwave Modulation ◽  
Tunable Frequency

To obtain low-phase-noise microwave signals with a widely tunable frequency range, an optoelectronic oscillator (OEO) was constructed on the basis of an optically injected semiconductor laser (OISL) for the generation of high-quality microwave signals. Our OEO relied on the effect of wavelength-selective amplification and the period-one (P1) oscillation under optical injection. The signal’s frequency stability, side-mode-suppression ratio (SMSR) and linewidth were optimized by the subharmonic microwave modulation technique in the OEO loop. The experimental results showed that the frequency of the signal obtained by the proposed OEO could be tuned up to 18 GHz. Using the dual-loop OEO structure, the SMSR was increased to 55 dB. Moreover, the phase noise of the obtained microwave signal was lower than −81 dBc/Hz at 1 kHz frequency offset and −119 dBc/Hz at 10 kHz frequency offset. This was achieved by introducing subharmonic microwave modulation in the OEO loop, respectively. Furthermore, via the utilization of a Fabry–Perot laser diode (FP-LD) in the proposed structure, a dual-loop OEO with different dual-frequency configurations (which could be tuned up to 12 and 18 GHz) was obtained.

Generation of new spatial and temporal coherent light states using III-V semiconductor laser technology: VORTEX, continuum, dual frequency for THz

2016 ◽  
Author(s):  
Arnaud Garnache ◽  
Mohamed Seghilani ◽  
Romain Paquet ◽  
Mohamed Sellhai ◽  
Baptiste Chomet ◽  
...  
Keyword(s):  
Semiconductor Laser ◽  
Dual Frequency ◽  
Coherent Light ◽  
Laser Technology

Compact all-optical inverter of extremely abrupt switching characteristics with dual-mode semiconductor laser employed

2001 ◽  
Vol 37 (25) ◽  
pp. 1544 ◽  
Author(s):  
Y. Takita ◽  
Y. Ozeki ◽  
M. Kishi ◽  
M. Tsuchiya
Keyword(s):  
Semiconductor Laser ◽  
Dual Mode ◽  
All Optical ◽  
Switching Characteristics ◽  
Optical Inverter
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