Light-emitting device with regularly patterned growth of an InGaN/GaN quantum-well nanorod light-emitting diode array

2013 ◽  
Vol 38 (17) ◽  
pp. 3370 ◽  
Author(s):  
Horng-Shyang Chen ◽  
Yu-Feng Yao ◽  
Che-Hao Liao ◽  
Charng-Gan Tu ◽  
Chia-Ying Su ◽  
...  
2015 ◽  
Vol 23 (17) ◽  
pp. 21919 ◽  
Author(s):  
Charng-Gan Tu ◽  
Yu-Feng Yao ◽  
Che-Hao Liao ◽  
Chia-Ying Su ◽  
Chieh Hsieh ◽  
...  

2014 ◽  
Vol 22 (S7) ◽  
pp. A1799 ◽  
Author(s):  
Charng-Gan Tu ◽  
Che-Hao Liao ◽  
Yu-Feng Yao ◽  
Horng-Shyang Chen ◽  
Chun-Han Lin ◽  
...  

2007 ◽  
Vol 17 (01) ◽  
pp. 81-84
Author(s):  
J. Senawiratne ◽  
M. Zhu ◽  
W. Zhao ◽  
Y. Xia ◽  
Y. Li ◽  
...  

Optical properties of green emission Ga 0.80 In 0.20 N/GaN multi-quantum well and light emitting diode have been investigated by using photoluminescence, cathodoluminescence, electroluminescence, and photoconductivity. The temperature dependent photoluminescence and cathodoluminescence studies show three emission bands including GaInN/GaN quantum well emission centered at 2.38 eV (~ 520 nm). The activation energy of the non-radiative recombination centers was found to be ~ 60 meV. The comparison of photoconductivity with luminescence spectroscopy revealed that optical properties of quantum well layers are strongly affected by the quantum-confined Stark effect.


Author(s):  
Chuan-Tsung Su ◽  
Yi-Chia Shan ◽  
Wei Fang ◽  
Chii-Wann Lin ◽  
Ju-Hsuan Juan ◽  
...  

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