Recovery Behavior of Separating Britholite (Ca3Ce2[(Si,P)O4]3F) Phase from Rare-Earth-rich Slag by Centrifugal Casting

AbstractA new approach to separate britholite phase from the rare-earth-rich slag by super gravity was investigated. With the parameter of G = 500, t = 5 min, T = 1423 K, almost all britholite phase is enriched in the concentrate, while the tailing is made up of CaF

Download Full-text

Separation of Rare Earth Precipitates From LiCl-KCl Eutectic Salts by a Distillation at a Reduced Pressure

ASME 2009 12th International Conference on Environmental Remediation and Radioactive Waste Management, Volume 1 ◽

10.1115/icem2009-16162 ◽

2009 ◽

Author(s):

Hee-Chul Eun ◽

Hee-Chul Yang ◽

Yung-Zun Cho ◽

Hwan-Seo Park ◽

Han-Soo Lee ◽

...

Keyword(s):

Rare Earth ◽

Vacuum Distillation ◽

Ambient Pressure ◽

Reduced Pressure ◽

Salt Distillation ◽

Almost All ◽

The Rare Earth

Distillation and condensation characteristics of LiCl-KCl eutectic salts containing rare earth precipitates were investigated to separate the rare earth precipitates from the salts effectively. The distillation flux of the salts was increased by about 1,000 times by reducing the ambient pressure from 760 Torr to 0.5 Torr. The salt vapors were almost changed into salt lumps during a salt distillation at the ambient pressure of 0.5 Torr and they were collected in the condensed salt storage. However, fine salt particles were formed when the salt distillation was processed at 10 Torr and it is difficult for them to be recovered. Therefore, it is thought that a salt vacuum distillation and condensation should be processed to recover almost all of the vaporized salts at a pressure below 0.5 Torr.

Download Full-text

A study of GaAs/Sc0.3Er0.7As/GaAs heterostructures grown on novel GaAs substrate orientations

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100088555 ◽

1991 ◽

Vol 49 ◽

pp. 848-849

Author(s):

Jane G. Zhu ◽

Chris J. Palmstrøm ◽

C. Barry Carter

Keyword(s):

Rare Earth ◽

Group Iv ◽

Layer By Layer ◽

Island Growth ◽

Group V ◽

Lattice Constants ◽

Almost All ◽

Novel Devices ◽

Lattice Matched ◽

The Rare Earth

Compound metallic materials, such as rare-earth (RE) monopnictides, are thermally stable and have lattice constants close to those of III-V semiconductors. These materials have been studied in the recent a few years. Epitactic ErAs, ScxEr1-xAs, ErPxSb1-x, and ErP0.6As0.4 (ref. 6) have been grown on GaAs by molecular beam epitaxy (MBE). By mixing rare-earth elements or group V elements, or both, rare-earth pnictides can be lattice-matched to almost all group IV, III-V and II-VI semiconductors. Lattice-matched growth of ScxEr1-x As/GaAs, for example, can be obtained using the composition x=0.32. It has been demonstrated that the rare-earth arsenides can be grown on (100) GaAs in a layer-by-layer mode with very good crystal quality, but the GaAs grown on the rare-earth arsenides has far inferior quality to meet the requirement of novel devices. Island growth of GaAs on RE As/GaAs has been reported.

Download Full-text