Epitaxial growth of graphene on silicon carbide (SiC)

Graphene ◽  
2014 ◽  
pp. 3-26 ◽  
Author(s):  
H. Huang ◽  
S. Chen ◽  
A.T.S. Wee ◽  
W. Chen
Keyword(s):  
Silicon Carbide ◽  
Epitaxial Growth

Total Energy Differences Between Silicon Carbide Polytypes and their Implications for Crystal Growth

1997 ◽  
Vol 492 ◽  
Author(s):  
Sukit Llmpijumnong ◽  
Walter R. L. Lambrecht
Keyword(s):  
Silicon Carbide ◽  
Crystal Growth ◽  
Epitaxial Growth ◽  
Size Effects ◽  
Nearest Neighbor ◽  
Orbital Method ◽  
Full Potential ◽  
Neighbor Interaction ◽  
Island Size ◽  
Annni Model

ABSTRACTThe energy differences between various SiC polytypes are calculated using the full-potential linear muffin-tin orbital method and analyzed in terms of the anisotropie next nearest neighbor interaction (ANNNI) model. The fact that J1 + 2J2 < 0 with J1 > 0 implies that twin boundaries in otherwise cubic material are favorable unless twins occur as nearest neighbor layers. Contrary to some other recent calculations we find J1 > |J2|. We discuss the consequences of this for stabilization of cubic SiC in epitaxial growth, including considerations of the island size effects.

Epitaxial growth of graphene on silicon carbide (SiC)

Graphene ◽  
2014 ◽  
pp. 177-198
Author(s):  
H. Huang ◽  
S. Chen ◽  
A.T.S. Wee ◽  
W. Chen
Keyword(s):  
Silicon Carbide ◽  
Epitaxial Growth

EPITAXIAL GROWTH OF β-SILICON CARBIDE

1969 ◽  
pp. S341-S353 ◽  
Author(s):  
R.W. Bartlett ◽  
R.A. Mueller
Keyword(s):  
Silicon Carbide ◽  
Epitaxial Growth

Heteroepitaxy of P-Doped 3C-SiC on Diamond by VLS Transport

2014 ◽  
Vol 806 ◽  
pp. 33-37
Author(s):  
Arthur Vo-Ha ◽  
Mickaël Rebaud ◽  
Mihai Lazar ◽  
Alexandre Tallaire ◽  
Véronique Soulière ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Solid State ◽  
Epitaxial Growth ◽  
Buffer Layer ◽  
Solid State Reaction ◽  
Silicon Layer ◽  
Diamond Surface ◽  
Heteroepitaxial Growth ◽  
Experimental Parameters ◽  
Vls Growth

This work deals with the selective heteroepitaxial growth of silicon carbide on (100) diamond substrates using the Vapour-Liquid-Solid (VLS) transport. The morphology, the structure and doping were determined using various characterization techniques. In order to achieve succesful heteroepitaxy, the diamond surface was silicided by solid-state reaction between a silicon layer and the substrate at 1350 °C. This allowed forming a SiC buffer layer on which p-doped 3C-SiC(100) islands elongated in the <110> directions were obtained after VLS growth. The influence of the experimental parameters on the epitaxial growth is discussed.

Bulk and epitaxial growth of micropipe-free silicon carbide on basal and rhombohedral plane seeds

2008 ◽  
Vol 245 (7) ◽  
pp. 1257-1271 ◽  
Author(s):  
B. M. Epelbaum ◽  
O. Filip ◽  
A. Winnacker
Keyword(s):  
Silicon Carbide ◽  
Epitaxial Growth ◽  
Free Silicon

Epitaxial Growth of Silicon on Hexagonal Silicon Carbide

1966 ◽  
Vol 37 (4) ◽  
pp. 1588-1593 ◽  
Author(s):  
R. L. Tallman ◽  
T. L. Chu ◽  
G. A. Gruber ◽  
J. J. Oberly ◽  
E. D. Wolley
Keyword(s):  
Silicon Carbide ◽  
Epitaxial Growth

Epitaxial growth and characterization of silicon carbide films

2006 ◽  
Vol 287 (2) ◽  
pp. 344-348 ◽  
Author(s):  
Govindhan Dhanaraj ◽  
Michael Dudley ◽  
Yi Chen ◽  
Balaji Ragothamachar ◽  
Bei Wu ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Epitaxial Growth

Epitaxial growth of cadmium telluride films on silicon with a buffer silicon carbide layer

2017 ◽  
Vol 59 (2) ◽  
pp. 399-402 ◽  
Author(s):  
V. V. Antipov ◽  
S. A. Kukushkin ◽  
A. V. Osipov
Keyword(s):  
Silicon Carbide ◽  
Epitaxial Growth ◽  
Cadmium Telluride ◽  
Carbide Layer

Influence of silicon cluster on epitaxial growth of silicon carbide

2011 ◽  
Vol 54 (9) ◽  
pp. 1579-1582 ◽  
Author(s):  
ZheYang Li ◽  
Yun Li ◽  
Chen Chen ◽  
Pin Han
Keyword(s):  
Silicon Carbide ◽  
Epitaxial Growth ◽  
Silicon Cluster
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