heteroepitaxial growth
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Materials ◽  
2022 ◽  
Vol 15 (2) ◽  
pp. 624
Author(s):  
Ruozheng Wang ◽  
Fang Lin ◽  
Qiang Wei ◽  
Gang Niu ◽  
Hong-Xing Wang

This paper investigates the formation and propagation of defects in the heteroepitaxial growth of single-crystal diamond with a thick film achieving 500 µm on Ir (001)/Al2O3 substrate. The growth of diamond follows the Volmer–Weber mode, i.e., initially shows the islands and subsequently coalesces to closed films. The films’ strain imposed by the substrate gradually relaxed as the film thickness increased. It was found that defects are mainly located at the diamond/Ir interface and are then mainly propagated along the [001] direction from the nucleation region. Etching pits along the [001] direction formed by H2/O2 plasma treatment were used to show defect distribution at the diamond/Ir/Al2O3 interface and in the diamond bulk, which revealed the reduction of etching pit density in diamond thick-film surface. These results show the evident impact of the thickness on the heteroepitaxially grown diamond films, which is of importance for various device applications.


Author(s):  
Yannan Wang ◽  
Yasushi Hirose ◽  
Takuto Wakasugi ◽  
Yuji Masubuchi ◽  
Masato Tsuchii ◽  
...  

2D Materials ◽  
2021 ◽  
Author(s):  
Puspendu Guha ◽  
Joon Young Park ◽  
Janghyun Jo ◽  
Yunyeong Chang ◽  
Hyeonhu Bae ◽  
...  

Abstract We report on heteroepitaxial growth of Sb2Te3-Bi2Te3 lateral heterostructures using molecular beam epitaxy. The lateral heterostructures were fabricated by growing Bi2Te3 islands of hexagonal or triangular nanostructures with a typical size of several hundred nm and thickness of ~ 15 nm on graphene substrates and Sb2Te3 laterally on the side facets of the nanostructures. Multiple-step processes with different growth temperatures were employed to grow the lateral heterostructures. Electron microscopy techniques indicate that the inner region is Bi2Te3 and the outer Sb2Te3 was formed laterally on the graphene in an epitaxial manner. The interface between Bi2Te3 and Sb2Te3 from planar and cross-sectional views was studied by the aberration-corrected (Cs-corrected) high-angle annular dark-field scanning TEM (HAADF-STEM) technique. The cross-sectional electron microscopy investigation shows no wetting layer of Sb2Te3 on Bi2Te3, corroborating perfect lateral heterostructure formation. In addition, we investigated the topological properties of Sb2Te3-Bi2Te3 lateral heterostructures using first-principles calculations.


2021 ◽  
Vol 8 (21) ◽  
pp. 2170116
Author(s):  
Mercedes Linares‐Moreau ◽  
Lea A. Brandner ◽  
Tomas Kamencek ◽  
Sumea Klokic ◽  
Francesco Carraro ◽  
...  

2021 ◽  
pp. 2101039
Author(s):  
Mercedes Linares‐Moreau ◽  
Lea A. Brandner ◽  
Tomas Kamencek ◽  
Sumea Klokic ◽  
Francesco Carraro ◽  
...  

Author(s):  
Katarzyna Ludwiczak ◽  
Aleksandra Krystyna Da̧browska ◽  
Johannes Binder ◽  
Mateusz Tokarczyk ◽  
Jakub Iwański ◽  
...  

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