Heteroepitaxy of P-Doped 3C-SiC on Diamond by VLS Transport

2014 ◽  
Vol 806 ◽  
pp. 33-37
Author(s):  
Arthur Vo-Ha ◽  
Mickaël Rebaud ◽  
Mihai Lazar ◽  
Alexandre Tallaire ◽  
Véronique Soulière ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Solid State ◽  
Epitaxial Growth ◽  
Buffer Layer ◽  
Solid State Reaction ◽  
Silicon Layer ◽  
Diamond Surface ◽  
Heteroepitaxial Growth ◽  
Experimental Parameters ◽  
Vls Growth

This work deals with the selective heteroepitaxial growth of silicon carbide on (100) diamond substrates using the Vapour-Liquid-Solid (VLS) transport. The morphology, the structure and doping were determined using various characterization techniques. In order to achieve succesful heteroepitaxy, the diamond surface was silicided by solid-state reaction between a silicon layer and the substrate at 1350 °C. This allowed forming a SiC buffer layer on which p-doped 3C-SiC(100) islands elongated in the <110> directions were obtained after VLS growth. The influence of the experimental parameters on the epitaxial growth is discussed.

3C-SiC Seeded Growth on Diamond Substrate by VLS Transport

2014 ◽  
Vol 778-780 ◽  
pp. 234-237
Author(s):  
Arthur Vo-Ha ◽  
Mickaël Rebaud ◽  
Davy Carole ◽  
Mihai Lazar ◽  
Alexandre Tallaire ◽  
...  
Keyword(s):  
Solid State ◽  
Buffer Layer ◽  
Silicon Layer ◽  
Seeded Growth ◽  
Epitaxial Relationship ◽  
Diamond Substrate ◽  
Vls Growth ◽  
Relationship Of ◽  
And Diffusion ◽  
Interfacial Reactivity

This work deals with the localized epitaxial growth of SiC on (100) diamond substrate using the Vapour-Liquid-Solid (VLS) transport. An epitaxial relationship of grown SiC with the seed was succesfully achieved when inserting a silicidation step before the VLS growth. This silicidation consists in the formation of a SiC intermediate layer on the diamond substrate by solid-state reaction with a silicon layer deposited at 1000 or 1350 °C. On the 1350°C formed SiC buffer layer, p-doped 3C-SiC(100) islands elongated in the <110> directions were obtained after VLS growth. For the 1000°C buffer layer, the SiC deposit after VLS growth is much denser but mostly polycrystalline. Interfacial reactivity and diffusion are considered to explain the obtained results.

A study of the solid state reaction between silicon carbide and iron

2002 ◽  
Vol 74 (3) ◽  
pp. 258-264 ◽  
Author(s):  
W.M. Tang ◽  
Z.X. Zheng ◽  
H.F. Ding ◽  
Z.H. Jin
Keyword(s):  
Silicon Carbide ◽  
Solid State ◽  
Solid State Reaction

Synthesis of Transition Metal Epitaxial Silicides on Silicon (100), (111)

1988 ◽  
Vol 128 ◽  
Author(s):  
V. V. Tokarev ◽  
V. E. Borisenko ◽  
T. M. Pyatkova
Keyword(s):  
Solid State ◽  
Transition Metal ◽  
Epitaxial Growth ◽  
Solid State Reaction ◽  
Systematic Investigation ◽  
Point Of View ◽  
Semiconductor Interface ◽  
Epitaxial Structure ◽  
Silicide Growth ◽  
New Devices

Epitaxial silicide growth is of great interest to many researchers and process engineers working in the field of microelectronics. The interest towards epitaxial silicides is due, firstly to the fact that these structures are suitable for systematic investigation of physics of a metal-semiconductor interface, and secondly that epitaxial intermetallic structures on silicon allow development of new devices such as threedimensional ones. At present, however, one can successfully form layers with epitaxial structure with thickness of no more than 150 nm using solid-state reaction in the metal layersilicon substrate system. Such values satisfy researchers dealing with problems of epitaxial growth because main processes occur in the range of 10–20 Å [1]From a technological point of view, however, it is desirable to form layers with thickness up to 1 μm.

New Substrate/Buffer Layer Compounds for Epitaxial HTSC Film Growth

1995 ◽  
Vol 401 ◽  
Author(s):  
A. Tauber ◽  
S. C. Tidrow ◽  
W. D. Wilber ◽  
R. D. Finnegan
Keyword(s):  
Thin Films ◽  
Elevated Temperature ◽  
Dielectric Properties ◽  
Solid State ◽  
Buffer Layer ◽  
Solid State Reaction ◽  
Film Growth ◽  
System A ◽  
Htsc Film ◽  
New Form

AbstractA series of compounds in the system A4MeSb13O12 where A=Ba, Sr and Me=Li, Na &K were prepared by solid state reaction at elevated temperature. A new form of Sr4NaSb3O12 was prepared. The compounds were characterized with regard to their lattice parameters, density and dielectric properties. Thin films were prepared by PLD from dense targets and epitaxial relationships identified between YBCO and these compounds.

Solid-State Reaction between Manganese Thin Films and Silicon carbide

1985 ◽  
Vol 24 (Part 1, No. 8) ◽  
pp. 940-943 ◽  
Author(s):  
Yoshiaki Okajima ◽  
Kunio Miyazaki
Keyword(s):  
Thin Films ◽  
Silicon Carbide ◽  
Solid State ◽  
Solid State Reaction

Optimization of the Silicidation and Growth Processes for 3C-SiC Heteroepitaxy on Diamond Substrate

2016 ◽  
Vol 858 ◽  
pp. 155-158 ◽  
Author(s):  
Véronique Soulière ◽  
Davy Carole ◽  
Gabriel Ferro
Keyword(s):  
Buffer Layer ◽  
Growth Process ◽  
Growth Parameters ◽  
Silicon Layer ◽  
Liquid Silicon ◽  
Heteroepitaxial Growth ◽  
Growth Processes ◽  
Seeding Layer ◽  
Diamond Substrate

This work reports on the CVD heteroepitaxial growth of 3C-SiC layers on diamond (100) substrates. To obtain good layer quality, the growth procedure involves a “silicidation” step consisting in depositing a silicon layer by CVD on the diamond substrate, in order to elaborate a very thin SiC buffer layer. 3C-SiC growth is then performed on this SiC seeding layer. Silicidation and growth parameters have been studied in order to improve the quality and the morphology uniformity of the heteroepitaxial layer. The study points out the role of liquid silicon during the growth process.

Epitaxial growth of CoSi2 film by Co/a-Si/Ti/Si(100) multilayer solid state reaction

2001 ◽  
Vol 89 (5) ◽  
pp. 2641-2648 ◽  
Author(s):  
Xin-Ping Qu ◽  
Guo-Ping Ru ◽  
Yong-Zhao Han ◽  
Bei-Lei Xu ◽  
Bing-Zong Li ◽  
...  
Keyword(s):  
Solid State ◽  
Epitaxial Growth ◽  
Solid State Reaction
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