Epitaxial Growth of Anisotropically Shaped, Single-crystal Particles of Cubic SrTiO3

2000 ◽  
Vol 15 (4) ◽  
pp. 846-849 ◽  
Author(s):  
Koji Watari ◽  
Bhaskar Brahmaroutu ◽  
Gary L. Messing ◽  
Susan Trolier-McKinstry ◽  
Shang-Cong Cheng

A novel method for synthesizing anisotropically shaped particles of materials having cubic symmetry is reported. Anisotropically shaped single-crystal particles of cubic SrTiO3 were obtained by epitaxial growth on tabular tetragonal Sr3Ti2O7. Transmission electron microscopy revealed that both the shape and the size of the single-crystal particles was regulated by selecting a precursor material that can act as a reaction site in molten KCl and has an epitaxial relation with SrTiO3. The [001] and [110] directions of tabular SrTiO3 are parallel to the [001] and [110] directions of the Sr3Ti2O7 host particle, respectively. Tabular SrTiO3 particles with rectangular faces having an edge length of 10–20 μm and a thickness of ˜2 μm were obtained by reacting TiO2 and tabular Sr3Ti2O7 particles of the same edge length in molten KCl.


1998 ◽  
Vol 553 ◽  
Author(s):  
C. Reich ◽  
M. Conrad ◽  
F. Krumeich ◽  
B. Harbrecht

AbstractThe dodecagonal (dd) quasicrystalline tantalum telluride dd Ta1.6Te and the crystalline approximant Ta97Te60 have been modified by partly replacing tantalum by vanadium. The impact of the substitution on the structures has been studied by X-ray and electron diffraction and by high-resolution transmission electron microscopy. The layered-type approximant structure of Ta83V14Te60 was determined by single crystal X-ray means. The partitioning of vanadium on 21 out of 29 crystallographically inequivalent metal sites is referred to, but not controlled by the Dirichlet domain volume available at the sites. A HRTEM projection of dd (Ta, V)1.6Te onto the dodecagonal plane is analysed with respect to the arrangement of (Ta, V)151Te74 clusters on the vertices of an irregular aperiodic square-triangle tiling, the edge length of which corresponds to the distance between the centres of two such clusters. The clusters comprise about 1 nm thick corrugated lamellae which are periodically stacked by weak Te-Te interactions.



2007 ◽  
Vol 556-557 ◽  
pp. 255-258
Author(s):  
Igor Matko ◽  
Bernard Chenevier ◽  
Jean Marie Bluet ◽  
Roland Madar ◽  
Fabrice Letertre ◽  
...  

QuaSiC TM substrates can be obtained by transferring a single crystal SiC layer onto a poly SiC substrate using the Smart Cut TM technology. In order to overcome the difficulty of limited thickness, an important improvement has been demonstrated, which consists in obtaining thick SiC structure by growing epitaxial SiC layers on top of transferred layers. The aim of this work is a structural analysis of such layers by Transmission Electron Microscopy and Photoluminescence.



2005 ◽  
Vol 13 (5) ◽  
pp. 525-527
Author(s):  
Cheng Yiyun ◽  
Cui Ronghui ◽  
He Pingsheng

This study presents a new method of preparing Mg(OH)2/epoxy resin nanocomposites. An epoxy resin micro-emulsion is taken as a micro-reactor for the formation of Mg(OH)2 nano-crystals. After the reaction, the collected epoxy proved to be a composite with embedded nano-Mg(OH)2. Transmission electron microscopy (TEM) indicated that the Mg(OH)2 nano-crystals were dispersed uniformly in cured epoxy resin matrix.



2016 ◽  
Vol 858 ◽  
pp. 225-228 ◽  
Author(s):  
Ren Wei Zhou ◽  
Xue Chao Liu ◽  
Hui Jun Guo ◽  
H.K. Kong ◽  
Er Wei Shi

Triangle-shaped defects are one of the most common surface defects on epitaxial growth of 4H-SiC epilayer on nearly on-axis SiC substrate. In this paper, we investigate the feature and structure of such defects using Nomarski optical microscopy (NOM), micro-Raman spectroscopy and high resolution transmission electron microscopy (HR-TEM). It is found that triangle-shaped defects were composed of a thick 3C-SiC polytype, as well as 4H-SiC epilayer.



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