An in-situ and ex-situ transmission electron microscopy study of the substrate orientational dependence of the solid-phase epitaxial growth of amorphized GaAs

2002 ◽  
Author(s):  
K.B. Belay ◽  
M.C. Ridgway ◽  
D.J. Llewellyn
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Epitaxial Growth ◽  
Solid Phase ◽  
Microscopy Study ◽  
Electron Microscopy Study ◽  
Ex Situ ◽  
Transmission Electron Microscopy Study ◽  
Transmission Electron

In situ transmission electron microscopy study of the silicidation process in Co thin films on patterned (001) Si substrates

2001 ◽  
Vol 16 (3) ◽  
pp. 701-708 ◽  
Author(s):  
C. Ghica ◽  
L. Nistor ◽  
H. Bender ◽  
A. Steegen ◽  
A. Lauwers ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Microscopy Study ◽  
Electron Microscopy Study ◽  
Ex Situ ◽  
Transmission Electron Microscopy Study ◽  
Fast Heating ◽  
Si Substrates ◽  
Transmission Electron

The results of an in situ transmission electron microscopy study of the formation of Co-silicides on patterned (001) Si substrates are discussed. It is shown that the results of the in situ heating experiments agreed very well with the data based on standard rapid thermal annealing experiments. Fast heating rates resulted in better definition of the silicide lines. Also, better lines were obtained for samples that received already a low-temperature ex situ anneal. A Ti cap layer gave rise to a higher degree of epitaxy in the CoSi2 silicide.

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