Thin Film Electronic Properties of Ternary Topological Insulator
Keyword(s):
ABSTRACTUsing an ab initio density functional theory (DFT), we study thin film electronic properties of topological insulators (TIs) based on ternary compounds of Tl (thallium) and Bi (bismuth). We consider TlBiX2 (X=Se, Te) and Bi2X2Y (X, Y=Se, Te) compounds. Here we discuss the nature of surface states, their locations in the Brillouin Zone (BZ) and their interactions within the bulk region. Our calculations suggest a critical film thickness to maintain the Dirac cone which is smaller than that in binary Bi-based compounds. Atomic relaxations are found to affect the Dirac cone in some of these compounds. We discuss the penetration depth of surface states into the bulk region.
2021 ◽
Vol 1951
(1)
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pp. 012010
2021 ◽
Vol 128
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pp. 114619
2012 ◽
Vol 5
(3)
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pp. 361-373
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1998 ◽
Vol 109
(16)
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pp. 6626-6630
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