Field Induced Crystal Nucleation in Chalcogenide Phase Change Memory

2009 ◽  
Vol 1160 ◽  
Author(s):  
Marco Nardone ◽  
Victor G. Karpov ◽  
Mukut Mitra ◽  
Ilya V. Karpov
Keyword(s):  
Phase Change ◽  
Experimental Work ◽  
Glass Phase ◽  
Elevated Temperatures ◽  
Phase Change Memory ◽  
Crystal Nucleation ◽  
Relaxation Oscillations ◽  
Material Parameters ◽  
Significant Addition ◽  
Change Memory

AbstractA summary is presented of our theoretical and experimental work over more than two years related to switching in chalcogenide glass phase change memory. As a significant addition to the well known experiments, we have studied switching under considerably lower voltages and elevated temperatures, as well as the statistics of switching events and relaxation oscillations. Our analytical theory, based on field induced crystal nucleation, predicts all of our observed features and their dependencies on material parameters.

Phase-change memory: Feasibility of reliable multilevel-cell storage and retention at elevated temperatures

2015 ◽  
Author(s):  
Milos Stanisavljevic ◽  
Aravinthan Athmanathan ◽  
Nikolaos Papandreou ◽  
Haralampos Pozidis ◽  
Evangelos Eleftheriou
Keyword(s):  
Phase Change ◽  
Elevated Temperatures ◽  
Phase Change Memory ◽  
Change Memory ◽  
Cell Storage

Crystal nucleation in glasses of phase change memory

2008 ◽  
Vol 104 (5) ◽  
pp. 054507 ◽  
Author(s):  
V. G. Karpov ◽  
Y. A. Kryukov ◽  
M. Mitra ◽  
I. V. Karpov
Keyword(s):  
Phase Change ◽  
Phase Change Memory ◽  
Crystal Nucleation ◽  
Change Memory

scholarly journals Ta-Doped Sb2Te Allows Ultrafast Phase-Change Memory with Excellent High-Temperature Operation Characteristics

2021 ◽  
Vol 13 (1) ◽  
Author(s):  
Yuan Xue ◽  
Shuai Yan ◽  
Shilong Lv ◽  
Sannian Song ◽  
Zhitang Song
Keyword(s):  
High Temperature ◽  
Phase Change ◽  
High Speed ◽  
Elevated Temperatures ◽  
Phase Change Memory ◽  
Three Dimensional ◽  
Amorphous Structure ◽  
Material System ◽  
Operation Speed ◽  
Change Memory

AbstractPhase-change memory (PCM) has considerable promise for new applications based on von Neumann and emerging neuromorphic computing systems. However, a key challenge in harnessing the advantages of PCM devices is achieving high-speed operation of these devices at elevated temperatures, which is critical for the efficient processing and reliable storage of data at full capacity. Herein, we report a novel PCM device based on Ta-doped antimony telluride (Sb2Te), which exhibits both high-speed characteristics and excellent high-temperature characteristics, with an operation speed of 2 ns, endurance of > 106 cycles, and reversible switching at 140 °C. The high coordination number of Ta and the strong bonds between Ta and Sb/Te atoms contribute to the robustness of the amorphous structure, which improves the thermal stability. Furthermore, the small grains in the three-dimensional limit lead to an increased energy efficiency and a reduced risk of layer segregation, reducing the power consumption and improving the long-term endurance. Our findings for this new Ta–Sb2Te material system can facilitate the development of PCMs with improved performance and novel applications.

Current Controlled Relaxation Oscillations in Ge 2 Sb 2 Te 5 -Based Phase Change Memory Devices

2016 ◽  
Vol 33 (3) ◽  
pp. 038503 ◽  
Author(s):  
Yao-Yao Lu ◽  
Dao-Lin Cai ◽  
Yi-Feng Chen ◽  
Yue-Qing Wang ◽  
Hong-Yang Wei ◽  
...  
Keyword(s):  
Phase Change ◽  
Phase Change Memory ◽  
Memory Devices ◽  
Relaxation Oscillations ◽  
Change Memory

Triangle Current Controlled Relaxation Oscillations in Ge2Sb2Te5 Based Phase Change Memory Devices

2012 ◽  
Vol 1 (6) ◽  
pp. M32-M34 ◽  
Author(s):  
Y. Wang ◽  
X. Chen ◽  
Z. Song ◽  
S. Li ◽  
Z. Wang ◽  
...  
Keyword(s):  
Phase Change ◽  
Phase Change Memory ◽  
Memory Devices ◽  
Relaxation Oscillations ◽  
Change Memory

Relaxation oscillations in chalcogenide phase change memory

2010 ◽  
Vol 107 (5) ◽  
pp. 054519 ◽  
Author(s):  
M. Nardone ◽  
V. G. Karpov ◽  
I. V. Karpov
Keyword(s):  
Phase Change ◽  
Phase Change Memory ◽  
Relaxation Oscillations ◽  
Change Memory

Theoretical Model of Crystal Nucleation in PCM Nano-Glasses

2008 ◽  
Vol 1072 ◽  
Author(s):  
V. G. Karpov ◽  
Y. A. Kryukov ◽  
M. Mitra ◽  
I. V. Karpov
Keyword(s):  
Crystalline State ◽  
Glass Structure ◽  
Phase Change Memory ◽  
Crystal Nucleation ◽  
Peak Time ◽  
Microscopic Structure ◽  
Material Parameters ◽  
Statistical Fluctuations ◽  
Log Normal ◽  
Change Memory

ABSTRACTWe propose a theoretical analysis of crystal nucleation in disordered nano-glass structure of chalcogenide phase change memory. Statistical fluctuations of microscopic structure parameters translate into statistical distribution of nucleation times determining the transition from the highly resistive (glassy) to the low resistive (crystalline) state. This distribution is shown to be log-normal with the peak time exponentially dependent on field strength, temperature, cell area and material parameters.

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