Phase-change memory: Feasibility of reliable multilevel-cell storage and retention at elevated temperatures

AbstractPhase-change memory (PCM) has considerable promise for new applications based on von Neumann and emerging neuromorphic computing systems. However, a key challenge in harnessing the advantages of PCM devices is achieving high-speed operation of these devices at elevated temperatures, which is critical for the efficient processing and reliable storage of data at full capacity. Herein, we report a novel PCM device based on Ta-doped antimony telluride (Sb2Te), which exhibits both high-speed characteristics and excellent high-temperature characteristics, with an operation speed of 2 ns, endurance of > 106 cycles, and reversible switching at 140 °C. The high coordination number of Ta and the strong bonds between Ta and Sb/Te atoms contribute to the robustness of the amorphous structure, which improves the thermal stability. Furthermore, the small grains in the three-dimensional limit lead to an increased energy efficiency and a reduced risk of layer segregation, reducing the power consumption and improving the long-term endurance. Our findings for this new Ta–Sb2Te material system can facilitate the development of PCMs with improved performance and novel applications.

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Correction: 12-state multi-level cell storage implemented in a 128 Mb phase change memory chip

Nanoscale ◽

10.1039/d1nr90100a ◽

2021 ◽

Author(s):

Zhitang Song ◽

Daolin Cai ◽

Yan Cheng ◽

Lei Wang ◽

Shilong Lv ◽

...

Keyword(s):

Phase Change ◽

Phase Change Memory ◽

Memory Chip ◽

Multi Level ◽

Change Memory ◽

Cell Storage

Correction for ‘12-state multi-level cell storage implemented in a 128 Mb phase change memory chip’ by Zhitang Song et al., Nanoscale, 2021, DOI: 10.1039/d1nr00100k.

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12-state multi-level cell storage implemented in a 128 Mb phase change memory chip

Nanoscale ◽

10.1039/d1nr00100k ◽

2021 ◽

Author(s):

Zhitang Song ◽

Daolin Cai ◽

Yan Cheng ◽

Lei Wang ◽

Shilong Lv ◽

...

Keyword(s):

Artificial Intelligence ◽

Phase Change ◽

Phase Change Memory ◽

Memory Chip ◽

Multi Level ◽

Change Memory ◽

Cell Storage

128 Mb Phase Change Memory (PCM) chips show potential for many applications in artificial intelligence.

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Field Induced Crystal Nucleation in Chalcogenide Phase Change Memory

MRS Proceedings ◽

10.1557/proc-1160-h13-02 ◽

2009 ◽

Vol 1160 ◽

Author(s):

Marco Nardone ◽

Victor G. Karpov ◽

Mukut Mitra ◽

Ilya V. Karpov

Keyword(s):

Phase Change ◽

Experimental Work ◽

Glass Phase ◽

Elevated Temperatures ◽

Phase Change Memory ◽

Crystal Nucleation ◽

Relaxation Oscillations ◽

Material Parameters ◽

Significant Addition ◽

Change Memory

AbstractA summary is presented of our theoretical and experimental work over more than two years related to switching in chalcogenide glass phase change memory. As a significant addition to the well known experiments, we have studied switching under considerably lower voltages and elevated temperatures, as well as the statistics of switching events and relaxation oscillations. Our analytical theory, based on field induced crystal nucleation, predicts all of our observed features and their dependencies on material parameters.

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