2015 IEEE International Reliability Physics Symposium
Latest Publications

TOTAL DOCUMENTS

185

(FIVE YEARS 0)

H-INDEX

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Published By IEEE

9781467373623

Latest Documents Most Cited Documents Contributed Authors Related Sources Related Keywords

Robust ESD self-protected LDNMOSFET by an enhanced displacement-current triggering

2015 IEEE International Reliability Physics Symposium ◽

10.1109/irps.2015.7112796 ◽

2015 ◽

Author(s):

Tzu-Cheng Kao ◽

Chen-Hsin Lien ◽

Chien-Wei Chiu ◽

Jian-Hsing Lee ◽

Yen-Hsiang Lo ◽

...

Keyword(s):

Displacement Current

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Electrical and reliability performance of atomic layer deposition HfO2 capping layer on porous low dielectric constant materials

2015 IEEE International Reliability Physics Symposium ◽

10.1109/irps.2015.7112773 ◽

2015 ◽

Author(s):

Kai-Chieh Kao ◽

Chi-Jia Huang ◽

Chang-Sian Wu ◽

Yi-Lung Cheng

Keyword(s):

Dielectric Constant ◽

Atomic Layer Deposition ◽

Atomic Layer ◽

Low Dielectric Constant ◽

Capping Layer ◽

Low Dielectric ◽

Layer Deposition ◽

Low Dielectric Constant Materials ◽

Reliability Performance

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Keynote Address 2: “Hybrid memory cube: Achieving high performance and high reliability”

2015 IEEE International Reliability Physics Symposium ◽

10.1109/irps.2015.7112657 ◽

2015 ◽

Author(s):

Brent Keeth

Keyword(s):

High Performance ◽

High Reliability ◽

Keynote Address ◽

Hybrid Memory

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A novel high level ESD FDNSCR with drain side engineering in PMIC application

2015 IEEE International Reliability Physics Symposium ◽

10.1109/irps.2015.7112795 ◽

2015 ◽

Cited By ~ 1

Author(s):

Yi-Ning He ◽

Jhih-Ming Wang ◽

Tien-Hao Tang ◽

Kuan-Cheng Su

Keyword(s):

Drain Side ◽

High Level

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Enhancement mode gallium nitride transistor reliability

2015 IEEE International Reliability Physics Symposium ◽

10.1109/irps.2015.7112686 ◽

2015 ◽

Author(s):

Alex Lidow ◽

Rob Strittmatter ◽

Chunhua Zhou ◽

Yanping Ma

Keyword(s):

Gallium Nitride ◽

Enhancement Mode ◽

Transistor Reliability

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Probabilistic design for reliability in electronics and photonics: Role, significance, attributes, challenges

2015 IEEE International Reliability Physics Symposium ◽

10.1109/irps.2015.7112749 ◽

2015 ◽

Cited By ~ 3

Author(s):

E. Suhir ◽

A. Bensoussan ◽

G. Khatibi ◽

J. Nicolics

Keyword(s):

Probabilistic Design ◽

Design For Reliability

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The reversed intrinsic curve and voltage dependence for ultra-low k dielectrics

2015 IEEE International Reliability Physics Symposium ◽

10.1109/irps.2015.7112774 ◽

2015 ◽

Author(s):

Wei-Ting Kary Chien ◽

Atman Yong Zhao ◽

Liwen Zhang ◽

Flora Cheng

Keyword(s):

Voltage Dependence ◽

Low K

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Impact of DC and RF non-conducting stress on nMOS reliability

2015 IEEE International Reliability Physics Symposium ◽

10.1109/irps.2015.7112835 ◽

2015 ◽

Cited By ~ 1

Author(s):

A. Cattaneo ◽

S. Pinarello ◽

J.-E. Mueller ◽

R. Weigel

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Understanding the underlying degradation physics for proper time-to-failure distribution selection

2015 IEEE International Reliability Physics Symposium ◽

10.1109/irps.2015.7112798 ◽

2015 ◽

Author(s):

J. W. McPherson

Keyword(s):

Proper Time ◽

Time To Failure ◽

Failure Distribution

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Maximum operating voltage (VMAX) limit for SOCs in thin form factor mobile devices with touch sensitive displays

2015 IEEE International Reliability Physics Symposium ◽

10.1109/irps.2015.7112708 ◽

2015 ◽

Author(s):

K. Maitra ◽

T. Nguyen ◽

K. Srinivasan ◽

S. Chen ◽

V. Jadhav ◽

...

Keyword(s):

Form Factor ◽

Mobile Devices ◽

Operating Voltage

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2015 IEEE International Reliability Physics SymposiumLatest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

Robust ESD self-protected LDNMOSFET by an enhanced displacement-current triggering

Electrical and reliability performance of atomic layer deposition HfO2 capping layer on porous low dielectric constant materials

Keynote Address 2: “Hybrid memory cube: Achieving high performance and high reliability”

A novel high level ESD FDNSCR with drain side engineering in PMIC application

Enhancement mode gallium nitride transistor reliability

Probabilistic design for reliability in electronics and photonics: Role, significance, attributes, challenges

The reversed intrinsic curve and voltage dependence for ultra-low k dielectrics

Impact of DC and RF non-conducting stress on nMOS reliability

Understanding the underlying degradation physics for proper time-to-failure distribution selection

Maximum operating voltage (VMAX) limit for SOCs in thin form factor mobile devices with touch sensitive displays

2015 IEEE International Reliability Physics Symposium
Latest Publications