“Column-By-Column” Compositional Mapping At Semiconductor Interfaces Using Z-Contrast Stem
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AbstractA new strategy for atomic resolution compositional mapping at semiconductor interfaces is presented. Images can be interpreted directly to within 10% to give column-by-column compositional information with a sensitivity approaching Rutherford scattering cross sections. We apply the method to obtain the first atomic resolution images of interfacial ordering in ultrathin (SimGen)p superlattices and attribute the results to growth on (2 × 1) and (1 × 2) reconstructed surfaces.
1990 ◽
Vol 51
(4)
◽
pp. 311-319
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2010 ◽
Vol 19
(05n06)
◽
pp. 989-996
1988 ◽
Vol 46
◽
pp. 534-535
Keyword(s):
Keyword(s):