Infrared absorption of deep defects in molecular-beam-epitaxial GaAs layers grown at 200 °C: Observation of anEL2-like defect

1990 ◽  
Vol 41 (14) ◽  
pp. 10272-10275 ◽  
Author(s):  
M. O. Manasreh ◽  
D. C. Look ◽  
K. R. Evans ◽  
C. E. Stutz
Keyword(s):  
Infrared Absorption ◽  
Molecular Beam ◽  
Epitaxial Gaas ◽  
Molecular Beam Epitaxial ◽  
Deep Defects

Incorporation of Silicon in Low Temperature Molecular Beam Epitaxial GaAs

1991 ◽  
Vol 241 ◽  
Author(s):  
M. O. Manasreh ◽  
K. R. Evans ◽  
C. E. Stutz ◽  
D. C Look ◽  
J. Hemsky
Keyword(s):  
Low Temperature ◽  
Thermal Annealing ◽  
Infrared Absorption ◽  
Growth Temperature ◽  
Molecular Beam ◽  
Vibrational Mode ◽  
The Other ◽  
Epitaxial Gaas ◽  
Molecular Beam Epitaxial ◽  
Absorption Technique

ABSTRACTThe localized vibrational mode (LVM) of silicon donor (SiGa) in molecular beam epitaxial GaAs layers grown at various temperatures is studied using the infrared absorption technique. It is found that the total integrated absorption of this LVM is decreased as the growth temperature decreases. This finding suggests a nonsubstitutional incorporation of Si in GaAs layers grown at ∼200 °C. On the other hand, an almost complete substitutional incorporation is obtained in GaAs layers grown at temperatures higher that 350 °C. Thermal annealing does not cause any recovery of the SiGa LVMs in present GaAs layers grown at ∼200°C.

Fermi level pinning in low‐temperature molecular beam epitaxial GaAs

1992 ◽  
Vol 61 (13) ◽  
pp. 1585-1587 ◽  
Author(s):  
H. Shen ◽  
F. C. Rong ◽  
R. Lux ◽  
J. Pamulapati ◽  
M. Taysing‐Lara ◽  
...  
Keyword(s):  
Low Temperature ◽  
Fermi Level ◽  
Molecular Beam ◽  
Epitaxial Gaas ◽  
Fermi Level Pinning ◽  
Molecular Beam Epitaxial

scholarly journals Electrical characterization of molecular beam epitaxial GaAs with peak electron mobilities up to ≊4×105cm2 V−1 s−1

1991 ◽  
Vol 58 (5) ◽  
pp. 478-480 ◽  
Author(s):  
C. R. Stanley ◽  
M. C. Holland ◽  
A. H. Kean ◽  
M. B. Stanaway ◽  
R. T. Grimes ◽  
...  
Keyword(s):  
Molecular Beam ◽  
Electrical Characterization ◽  
Epitaxial Gaas ◽  
Molecular Beam Epitaxial

Photoluminescence characterization of molecular beam epitaxial GaAs grown using cracked AsH3

1984 ◽  
Vol 44 (2) ◽  
pp. 240-242 ◽  
Author(s):  
B. J. Skromme ◽  
G. E. Stillman ◽  
A. R. Calawa ◽  
G. M. Metze
Keyword(s):  
Molecular Beam ◽  
Epitaxial Gaas ◽  
Molecular Beam Epitaxial

Growth‐induced shallow acceptor defect and related luminescence effects in molecular beam epitaxial GaAs

1990 ◽  
Vol 68 (2) ◽  
pp. 741-754 ◽  
Author(s):  
I. Szafranek ◽  
M. A. Plano ◽  
M. J. McCollum ◽  
S. A. Stockman ◽  
S. L. Jackson ◽  
...  
Keyword(s):  
Molecular Beam ◽  
Shallow Acceptor ◽  
Epitaxial Gaas ◽  
Molecular Beam Epitaxial ◽  
Acceptor Defect

Growth-parameter dependence of deep levels in molecular-beam-epitaxial GaAs

1980 ◽  
Vol 16 (5) ◽  
pp. 171 ◽  
Author(s):  
R.A. Stall ◽  
C.E.C. Wood ◽  
P.D. Kirchner ◽  
L.F. Eastman
Keyword(s):  
Molecular Beam ◽  
Growth Parameter ◽  
Deep Levels ◽  
Parameter Dependence ◽  
Epitaxial Gaas ◽  
Molecular Beam Epitaxial
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