Electron Paramagnetic Resonance Study of Low Temperature Molecular Beam Epitaxy Grown GaAs and InP Layers

1991 ◽  
Vol 241 ◽  
Author(s):  
H. J. von Bardeleben ◽  
Y. Q. Jia ◽  
J. P. Hirtz ◽  
J. C. Garcia ◽  
M. O. Manasreh ◽  
...  
Keyword(s):  
Electron Paramagnetic Resonance ◽  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Molecular Beam ◽  
Electron Paramagnetic Resonance Study ◽  
Paramagnetic Resonance ◽  
Native Defects ◽  
Antisite Defects ◽  
High Concentrations ◽  
Electron Paramagnetic

ABSTRACTThe native defects in LTMBE III-V layers have been studied by the electron paramagnetic resonance (EPR) technique for three different systems: GaAs on GaAs, GaAs on Si and InP on InP. The GaAs layers are characterised by high concentrations of ionized arsenic antisite defects(1019 cm −3), with properties similar to those of the native AsGa in amorphous GaAs. Their variation with the growth temperature, layer thickness and thermal annealings has been assessed.The results are independant on the nature of the substrate, GaAs or Si. Inspite of a 1% phosphorous excess no phosphorous antisites could be detected in the as-grown, undoped or Be doped InP layers.

Behavior of Native Defects in Semi-Insulating 4H-SiC after High Temperature Anneals and Different Cool-Down Rates

2008 ◽  
Vol 600-603 ◽  
pp. 389-392
Author(s):  
N.Y. Garces ◽  
E.R. Glaser ◽  
W.E. Carlos ◽  
Mark A. Fanton
Keyword(s):  
Electron Paramagnetic Resonance ◽  
High Temperature ◽  
Low Temperature ◽  
High Purity ◽  
Paramagnetic Resonance ◽  
Native Defects ◽  
Carrier Lifetimes ◽  
High Temperature Anneal ◽  
Electron Paramagnetic ◽  
Low Temperature Photoluminescence

We have recently explored the nature and stability of native defects in high-purity semi-insulating 4H-SiC bulk substrates grown by PVT and HTCVD methods after post-growth anneal treatments up to 2400oC using electron paramagnetic resonance (EPR) and low-temperature photoluminescence (PL) experiments. In the present study we have extended these investigations to SI 4H-SiC subjected to the same post-growth high-temperature anneal treatments, where significantly enhanced carrier lifetimes have been reported for such conditions, but cooled at different rates ranging from ~2-25oC/min. Previously, the intensities of the native defects decreased monotonically with anneals from 1200–1800oC; however, it was recently observed that several of these defects reappear after annealing at 2100oC and above. Our results illustrate the effects of the post-growth anneal treatments and cool-down rates on the concentrations of native defects.

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