Quantum Efficiency of Textured a-Si:H P-I-N Solar Cells After High Intensity Light-Soaking

1992 ◽  
Vol 258 ◽  
Author(s):  
X. R. Li ◽  
S. Wagner ◽  
M. Bennett ◽  
S. J. Fonash
Keyword(s):  
Solar Cells ◽  
Light Intensity ◽  
Quantum Efficiency ◽  
White Light ◽  
High Intensity ◽  
Short Circuit ◽  
Experimental Results ◽  
Intensity Dependence ◽  
High Intensity Light

ABSTRACTWe studied the effect of high-intensity light-soaking on the quantum efficiency spectrum of textured a-Si:H solar cells. We report experimental results on the time, temperature, and soaking light intensity dependence of the quantum efficiency (QE) measured in short circuit. Under 3Wcm-2 of white light the QE saturates after 30 minutes. The QE decays little in the blue and strongly in the red. The higher the temperature of saturation, the smaller the decay of the QE.

scholarly journals Origin of the light intensity dependence of the short-circuit current of polymer/fullerene solar cells

2005 ◽  
Vol 87 (20) ◽  
pp. 203502 ◽  
Author(s):  
L. J. A. Koster ◽  
V. D. Mihailetchi ◽  
H. Xie ◽  
P. W. M. Blom
Keyword(s):  
Solar Cells ◽  
Light Intensity ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Intensity Dependence

Light intensity dependence of open-circuit voltage and short-circuit current of polymer/fullerene solar cells

2006 ◽  
Author(s):  
L. Jan A. Koster ◽  
Valentin D. Mihailetchi ◽  
Robert Ramaker ◽  
Hangxing Xie ◽  
Paul W. Blom
Keyword(s):  
Solar Cells ◽  
Light Intensity ◽  
Open Circuit Voltage ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Open Circuit ◽  
Intensity Dependence

scholarly journals Features of model thin-film solar cells photoelectric characteristics based on a non-toxic multi-component connection CuZn2AlS4

2021 ◽  
Vol 5 (3) ◽  
pp. 242-250
Author(s):  
D. Sergeyev ◽  
K. Shunkeyev ◽  
B. Kuatov ◽  
N. Zhanturina
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Quantum Efficiency ◽  
Fill Factor ◽  
Open Circuit Voltage ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Open Circuit ◽  
Thin Film Solar Cells ◽  
Current Voltage

In this paper, the features of the characteristics of model thin-film solar cells based on the non-toxic multicomponent compound CuZn2AlS4 (CZAS) are considered. The main parameters (open-circuit voltage, short-circuit current, fill factor, efficiency) and characteristics (quantum efficiency, current-voltage characteristic) of thin-film solar cells based on CZAS have been determined. The minimum optimal thickness of the CZAS absorber is found (1-1.25 microns). Deterioration of the performance of solar cells with an increase in operating temperature (280-400 K) is shown. It is revealed that in the wavelength range of 390-500 nm CZAS has a high external quantum efficiency, which allows its use in designs of multi-junction solar cells designed to absorb solar radiation in the specified range. It is shown that the combination of CZAS films with a buffer layer of non-toxic ZnS increases the performance of solar cells.

Temperature and Light Intensity Dependence of Polymer Solar Cells with MoO3 and PEDOT:PSS as a Buffer Layer

2011 ◽  
Vol 59 (2) ◽  
pp. 362-366 ◽  
Author(s):  
Yongju Park ◽  
Seunguk Noh ◽  
Donggu Lee ◽  
Jun Young Kim ◽  
Changhee Lee
Keyword(s):  
Solar Cells ◽  
Light Intensity ◽  
Buffer Layer ◽  
Polymer Solar Cells ◽  
Intensity Dependence

Improved Back Reflector for High Efficiency Hydrogenated Amorphous and Nanocrystalline Silicon Based Solar Cells

2005 ◽  
Vol 862 ◽  
Author(s):  
Baojie Yan ◽  
Jessica M. Owens ◽  
Chun-Sheng Jiang ◽  
Jeffrey Yang ◽  
Subhendu Guha
Keyword(s):  
Solar Cells ◽  
Light Intensity ◽  
Silicon Germanium ◽  
High Efficiency ◽  
Short Circuit ◽  
Scattered Light ◽  
Nanocrystalline Silicon ◽  
Scattered Light Intensity ◽  
Micro Features ◽  
Hydrogenated Amorphous

AbstractAg/ZnO back reflectors (BR) on specular stainless steel substrates are optimized for hydrogenated amorphous silicon germanium alloy (a-SiGe:H) and nanocrystalline silicon (nc-Si:H) solar cells. The BRs are deposited using a sputtering method. The texture of the Ag and ZnO layers is controlled by deposition parameters as well as chemical etching with diluted HCl. The surface morphology is investigated by atomic force microscopy. The scattered light intensity from a He-Ne laser, which illuminates the sample surface perpendicularly, is measured at different angles. Finally, a-SiGe:H and nc-Si:H solar cells are deposited on the BR substrates prepared under various conditions. For a-SiGe:H bottom cells, the improved BR with large micro-features leads to an enhanced open-circuit voltage. For the nc-Si:H solar cells, large micro-features on the improved BR eliminate interference fringes otherwise observed in the quantum efficiency measurement and result in high short circuit current density. The result is consistent with an enhanced scattered light intensity. Hence, the cell performance was improved. We also deposited a-Si:H/a-SiGe:H/nc-Si:H triple-junction cells on the optimized BR and achieved a high initial active-area efficiency of 14.6%.

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