Hydrogen Passivated Carbon Acceptors in GaAs and AlAs: no Evidence for Carbon Donors

1993 ◽  
Vol 325 ◽  
Author(s):  
B. R. Davidson ◽  
R. C. Newman ◽  
R. E. Pritchard ◽  
T. J. Bullough ◽  
T. B. Joyce ◽  
...  

AbstractGaAs and AlAs layers grown by CBE and doped with either 12C or 13C have been passivated with hydrogen or deuterium. Infrared absorption lines due to hydrogen stretch modes, symmetric A1 modes and “carbon-like” E modes of H-CAs and D-CAs pairs have been assigned for both isotopes in both hosts. Comparisons have been made with new ab initio local density functional theory and simple harmonic models. Anticrossing behaviour is found for the two types of coupled E modes in the two hosts. The dynamics of the H-CAs centre are very similar in GaAs and AlAs.

1993 ◽  
Vol 85 (1-3) ◽  
pp. 127-136 ◽  
Author(s):  
Peter Politzer ◽  
Jorge M. Seminario ◽  
Monica C. Concha ◽  
Jane S. Murray

2018 ◽  
Vol 20 (27) ◽  
pp. 18844-18849 ◽  
Author(s):  
Hengxin Tan ◽  
Yuanchang Li ◽  
S. B. Zhang ◽  
Wenhui Duan

Optimal choice of the element-specific pseudopotential improves the band gap.


2019 ◽  
Vol 21 (35) ◽  
pp. 19639-19650 ◽  
Author(s):  
Abhilash Patra ◽  
Subrata Jana ◽  
Hemanadhan Myneni ◽  
Prasanjit Samal

Improved band gap of n-type semiconductor ZrS2 within semi-local density functional theory is shown. The band gap of mBR-TBMBJ agrees well with the hybrid HSE06 functional.


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