Ion Energy Distributions in Silane-Hydrogen Plasmas

1996 ◽  
Vol 420 ◽  
Author(s):  
E. A. G. Hamers ◽  
W. G. J. H. M. Van Sark ◽  
J. Bezemer ◽  
W. F. Van Der Weg ◽  
W. J. Goedheer
Keyword(s):  
Charge Density ◽  
Charge Exchange ◽  
Exchange Process ◽  
Plasma Potential ◽  
Energy Distributions ◽  
Charge Exchange Process ◽  
Net Charge ◽  
Ion Energy ◽  
A Charge ◽  
Ion Energy Distributions

AbstractFor the first time ion energy distributions (IED) of different ions from silane-hydrogen (SiH4-H2 ) RF plasmas are presented, i.e. the distributions of SiH3+, SiH2+ and SiH2+. The energy distributions of SiH3+ and SiH3+ ions show peaks, which are caused by a charge exchange process in the sheath. A method is presented by which the net charge density in the sheath is determined from the plasma potential and the energy positions of the charge exchange peaks. Knowing the net charge density in the sheath and the plasma potential, the sheath thickness can be determined and an estimation of the absolute ion fluxes can be made. The flux of ions can, at maximum, account for 10% of the observed deposition rate.

Low Temperature Phase Transition (Pt) and Defect Formation (Df) in Silicon with Dioxide Inclusions Under X-Ray Irradiation

1995 ◽  
Vol 396 ◽  
Author(s):  
SH.M. Makhkamov ◽  
S.N. Abdurakhmanova
Keyword(s):  
Phase Transition ◽  
Charge Exchange ◽  
Defect Formation ◽  
Exchange Process ◽  
Temperature Phase ◽  
X Rays ◽  
Charge Exchange Process ◽  
X Ray ◽  
Temperature Phase Transition ◽  
A Charge

AbstractStudies of galvanomagnetic and electrical parameters of p- type Si : SiO2 in the temperature range 80 – 400 K have shown that X-ray irradiation at 80 K (Mo Ka,β and braking radiation hvmax. = 50 heV) leads to various transformations of the spectrum of electron- hole states in the band gap of such material, depending on the flux density of the X-rays. Two main processes are observed: the defect (vacancy and divacancy) formation and a charge exchange of native defects localized at the Si – SiO2 interface. The charge exchange process is rather collective and stimulated one because it is in response to an X-ray-induced ferroelectric phase transition in the SiO2- phase.

Application of a charge-exchange process to optical diagnostics of the interaction of a laser-generated plasma with a dipole magnetic field

1995 ◽  
Vol 36 (4) ◽  
pp. 488-495 ◽  
Author(s):  
I. F. Shaikhislamov ◽  
V. M. Antonov ◽  
Yu. P. Zakharov ◽  
A. V. Melekhov ◽  
V. G. Posukh ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Charge Exchange ◽  
Exchange Process ◽  
Optical Diagnostics ◽  
Charge Exchange Process ◽  
Dipole Magnetic Field ◽  
A Charge

Low energy highly charged ion beam facility at Inter University Accelerator Centre: Measurement of the plasma potential and ion energy distributions

2015 ◽  
Vol 22 (11) ◽  
pp. 113503 ◽  
Author(s):  
T. Sairam ◽  
Pragya Bhatt ◽  
Ajit Kumar ◽  
Herendra Kumar ◽  
C. P. Safvan
Keyword(s):  
Ion Beam ◽  
Plasma Potential ◽  
Low Energy ◽  
Energy Distributions ◽  
Ion Energy ◽  
Highly Charged Ion ◽  
Ion Energy Distributions

Use of a charge-exchange process in spectral diagnostics of plasma streams

1994 ◽  
Vol 35 (3) ◽  
pp. 481-486 ◽  
Author(s):  
Yu. P. Zakharov ◽  
O. M. Orishich ◽  
V. N. Snytnikov ◽  
I. F. Shaikhislamov
Keyword(s):  
Charge Exchange ◽  
Exchange Process ◽  
Charge Exchange Process ◽  
Spectral Diagnostics ◽  
A Charge
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