Low energy highly charged ion beam facility at Inter University Accelerator Centre: Measurement of the plasma potential and ion energy distributions

2015 ◽  
Vol 22 (11) ◽  
pp. 113503 ◽  
Author(s):  
T. Sairam ◽  
Pragya Bhatt ◽  
Ajit Kumar ◽  
Herendra Kumar ◽  
C. P. Safvan
Keyword(s):  
Ion Beam ◽  
Plasma Potential ◽  
Low Energy ◽  
Energy Distributions ◽  
Ion Energy ◽  
Highly Charged Ion ◽  
Ion Energy Distributions

Ion Energy Distributions in Silane-Hydrogen Plasmas

1996 ◽  
Vol 420 ◽  
Author(s):  
E. A. G. Hamers ◽  
W. G. J. H. M. Van Sark ◽  
J. Bezemer ◽  
W. F. Van Der Weg ◽  
W. J. Goedheer
Keyword(s):  
Charge Density ◽  
Charge Exchange ◽  
Exchange Process ◽  
Plasma Potential ◽  
Energy Distributions ◽  
Charge Exchange Process ◽  
Net Charge ◽  
Ion Energy ◽  
A Charge ◽  
Ion Energy Distributions

AbstractFor the first time ion energy distributions (IED) of different ions from silane-hydrogen (SiH4-H2 ) RF plasmas are presented, i.e. the distributions of SiH3+, SiH2+ and SiH2+. The energy distributions of SiH3+ and SiH3+ ions show peaks, which are caused by a charge exchange process in the sheath. A method is presented by which the net charge density in the sheath is determined from the plasma potential and the energy positions of the charge exchange peaks. Knowing the net charge density in the sheath and the plasma potential, the sheath thickness can be determined and an estimation of the absolute ion fluxes can be made. The flux of ions can, at maximum, account for 10% of the observed deposition rate.

Carbon Nitride Film Formation by Low Energy Positive and Negative Ion Beam Deposition

1996 ◽  
Vol 438 ◽  
Author(s):  
N. Tsubouchi ◽  
Y. Horino ◽  
B. Enders ◽  
A. Chayahara ◽  
A. Kinomura ◽  
...  
Keyword(s):  
Carbon Nitride ◽  
Rutherford Backscattering Spectrometry ◽  
Ion Beam ◽  
High Vacuum ◽  
Negative Ions ◽  
Low Energy ◽  
Ultra High Vacuum ◽  
Negative Ion ◽  
Nitride Film ◽  
Ion Energy

AbstractUsing a newly developed ion beam apparatus, PANDA (Positive And Negative ions Deposition Apparatus), carbon nitride films were prepared by simultaneous deposition of mass-analyzed low energy positive and negative ions such as C2-, N+, under ultra high vacuum conditions, in the order of 10−6 Pa on silicon wafer. The ion energy was varied from 50 to 400 eV. The film properties as a function of their beam energy were evaluated by Rutherford Backscattering Spectrometry (RBS), Fourier Transform Infrared spectroscopy (FTIR) and Raman scattering. From the results, it is suggested that the C-N triple bond contents in films depends on nitrogen ion energy.

Use of Zr? secondary ion energy distributions and factor analysis to construct chemical-state depth profiles in SIMS

1995 ◽  
Vol 23 (9) ◽  
pp. 573-580 ◽  
Author(s):  
S. J. Splinter ◽  
P. A. W. van der Heide ◽  
A. Lin ◽  
N. S. McIntyre
Keyword(s):  
Factor Analysis ◽  
Chemical State ◽  
Energy Distributions ◽  
Ion Energy ◽  
Depth Profiles ◽  
Ion Energy Distributions ◽  
Secondary Ion

Ion energy distributions in rf sheaths; review, analysis and simulation

1999 ◽  
Vol 8 (3) ◽  
pp. R45-R64 ◽  
Author(s):  
E Kawamura ◽  
V Vahedi ◽  
M A Lieberman ◽  
C K Birdsall
Keyword(s):  
Energy Distributions ◽  
Ion Energy ◽  
Review Analysis ◽  
Ion Energy Distributions

scholarly journals Ponderomotive force and ion energy distributions in an rf sheath

1992 ◽  
Vol 68 (1) ◽  
pp. 44-47 ◽  
Author(s):  
S. Hamaguchi ◽  
R. T. Farouki ◽  
M. Dalvie
Keyword(s):  
Ponderomotive Force ◽  
Energy Distributions ◽  
Ion Energy ◽  
Ion Energy Distributions
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