Domain Wall Contributions to the Piezoelectric Properties of Ferroelectric Ceramics and Thin Films, and Their Significance in Sensor and Actuator Applications

ABSTRACTThe piezoelectric and dielectric properties of ferroelectric thin films and ceramics were investigated in detail as a function of the frequency and amplitude of the driving field. A description, which is based on the theories of domain wall pinning by randomly distributed imperfections in magnetic materials, is used to interpret the electromechanical behaviour of several ferroelectric bulk ceramic and thin film compositions. With this approach, it is possible to make quantitative estimates of the domain wall contributions to the electromechanical properties of ferroelectric sensors and actuators.

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Micromagnetic study of domain-wall pinning characteristics with grooves in thin films

Journal of Applied Physics ◽

10.1063/1.1857652 ◽

2005 ◽

Vol 97 (10) ◽

pp. 10E317 ◽

Cited By ~ 3

Author(s):

H. Asada ◽

H. Ii ◽

J. Yamasaki ◽

M. Takezawa ◽

T. Koyanagi

Keyword(s):

Thin Films ◽

Domain Wall ◽

Domain Wall Pinning

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Priority of domain wall pinning during the fatigue period in bismuth titanate ferroelectric thin films

Applied Physics Letters ◽

10.1063/1.1925308 ◽

2005 ◽

Vol 86 (19) ◽

pp. 192908 ◽

Cited By ~ 12

Author(s):

Wei Li ◽

Aiping Chen ◽

Xiaomei Lu ◽

Jinsong Zhu ◽

Yening Wang

Keyword(s):

Thin Films ◽

Domain Wall ◽

Bismuth Titanate ◽

Ferroelectric Thin Films ◽

Domain Wall Pinning

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Origin of 90° domain wall pinning in Pb(Zr0.2Ti0.8)O3heteroepitaxial thin films

Applied Physics Letters ◽

10.1063/1.3634028 ◽

2011 ◽

Vol 99 (10) ◽

pp. 102902 ◽

Cited By ~ 37

Author(s):

Dong Su ◽

Qingping Meng ◽

C. A. F. Vaz ◽

Myung-Geun Han ◽

Yaron Segal ◽

...

Keyword(s):

Thin Films ◽

Domain Wall ◽

Domain Wall Pinning

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Domain and lattice contributions to dielectric and piezoelectric properties of Pb(Zrx, Ti1−x)O3 thin films as a function of composition

Journal of Materials Research ◽

10.1557/jmr.1999.0584 ◽

1999 ◽

Vol 14 (11) ◽

pp. 4307-4318 ◽

Cited By ~ 78

Author(s):

S. Hiboux ◽

P. Muralt ◽

T. Maeder

Keyword(s):

Thin Films ◽

Dielectric Properties ◽

Domain Wall ◽

Diffraction Analysis ◽

Piezoelectric Properties ◽

X Ray Diffraction ◽

X Ray ◽

Sputter Deposited ◽

Dielectric And Piezoelectric Properties

In situ reactively sputter deposited, 300-nm-thick Pb(Zrx, Ti1−x)O3 thin films were investigated as a function of composition, texture, and different electrodes (Pt,RuO2).X-ray diffraction analysis, ferroelectric, dielectric, and piezoelectric measurements were carried out. While for dielectric properties bulklike contributions from lattice as well as from domains are observed, domain wall contributions to piezoelectric properties are very much reduced in the morphotropic phase boundary (MPB) region. Permittivity and d33 do not peak at the same composition; the MPB region is broadened up and generally shifted to the tetragonal side.

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