Local Electronic Structure Of Defects In Gan From Spatially Resolved Electron Energy-Loss Spectroscopy

1997 ◽  
Vol 482 ◽  
Author(s):  
M. K. H. Natusch ◽  
G. A. Botton ◽  
R. F. Broom ◽  
P. D. Brown ◽  
D. M. Tricker ◽  
...  

AbstractThe optical properties and their modification by crystal defects of wurtzite GaN are investigated using spatially resolved electron energy-loss spectroscopy (EELS) in a dedicated ultra-high vacuum field emission gun scanning transmission electron microscope. The calculated density of states of the bulk crystal reproduces well the features of the measured spectra. The profound effect of a prismatic stacking fault on the local electronic structure is shown by the spatial variation of the optical properties derived from low-loss spectra. It is found that a defect state at the fault appears to bind 1.5 electrons per atom.

2006 ◽  
Vol 12 (S02) ◽  
pp. 1156-1157
Author(s):  
Q Li ◽  
J Dai ◽  
X Gong

Extended abstract of a paper presented at Microscopy and Microanalysis 2006 in Chicago, Illinois, USA, July 30 – August 3, 2006


2016 ◽  
Vol 4 (35) ◽  
pp. 13636-13645 ◽  
Author(s):  
Jessica A. Alexander ◽  
Frank J. Scheltens ◽  
Lawrence F. Drummy ◽  
Michael F. Durstock ◽  
James B. Gilchrist ◽  
...  

Spatially resolved mapping of optical properties in organic photovoltaics.


2007 ◽  
Vol 1044 ◽  
Author(s):  
Oystein Prytz ◽  
Ragnhild Saterli ◽  
Randi Holmestad ◽  
Johan Tafto

AbstractThe local electronic structure of phosphorus in the binary skutterudites CoP3 and NiP3, and in the filled skutterudite LaFe4P12 are studied using a combination of electron energy-loss spectroscopy and ab initio calculations. Relative to CoP3 we observe a filling of phosphorus s and d states in NiP3, while for LaFe4P12 increased EELS intensity indicates more empty s and d states close to the Fermi-level.


2003 ◽  
Vol 786 ◽  
Author(s):  
G. L. Tan ◽  
L. K. Denoyer ◽  
R. H. French ◽  
A. Ramos ◽  
M. Gautier-Soyer ◽  
...  

ABSTRACTCharacterization of thin surficial films of oxides has become the focus of increased interest due to their applications in microelectronics. The ability to experimentally determine the electronic structure and optical properties of oxide materials permits the direct study of the interband transitions from the valence to the conduction band states. In the past years there has been much progress in the quantitative analysis of transmission electron energy loss spectroscopy (TEELS) in the electron microscopeHere we employed reflection electron energy loss function (REELS) as well as vacuum ultraviolet (VUV) spectroscopy to determine the dielectric functions of oxide materials, i.e. Al2O3, ZrO2 and SrTiO3. The two main steps in the analysis are the removal of the effects of multiple scattering from the REELS spectra followed by application of the Kramers-Kronig dispersion transforms to the single scattering energy loss function to determine the conjugate optical variable and then the complex dielectric function. The surface and bulk plasma resonance spectra for these oxide materials have been determined from VUV and REELS, along with the influence of primary electron energy on the REELS results. The relative contribution of surface and bulk plasmon oscillation in REELS has been investigated. Comparison with VUV results and existing TEELS results indicate that Kramers-Kronig analysis can also be applied to REELS spectra and the corresponding conjugate optical properties can be obtained. Quantitative studies of the electronic structure and optical properties of thin surficial films using VUV and REELS or TEELS, represent a new avenue to determine the properties of these increasingly important films.


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