Measurement of optical properties in organic photovoltaic materials using monochromated electron energy-loss spectroscopy

2016 ◽  
Vol 4 (35) ◽  
pp. 13636-13645 ◽  
Author(s):  
Jessica A. Alexander ◽  
Frank J. Scheltens ◽  
Lawrence F. Drummy ◽  
Michael F. Durstock ◽  
James B. Gilchrist ◽  
...  
Keyword(s):  
Optical Properties ◽  
Energy Loss ◽  
Electron Energy ◽  
Organic Photovoltaics ◽  
Electron Energy Loss Spectroscopy ◽  
Organic Photovoltaic ◽  
Spatially Resolved ◽  
Photovoltaic Materials ◽  
Organic Photovoltaic Materials ◽  
Electron Energy Loss

Spatially resolved mapping of optical properties in organic photovoltaics.

scholarly journals High-resolution monochromated electron energy-loss spectroscopy of organic photovoltaic materials

2017 ◽  
Vol 180 ◽  
pp. 125-132 ◽  
Author(s):  
Jessica A. Alexander ◽  
Frank J. Scheltens ◽  
Lawrence F. Drummy ◽  
Michael F. Durstock ◽  
Fredrik S. Hage ◽  
...  
Keyword(s):  
High Resolution ◽  
Energy Loss ◽  
Electron Energy ◽  
Electron Energy Loss Spectroscopy ◽  
Organic Photovoltaic ◽  
Photovoltaic Materials ◽  
Organic Photovoltaic Materials ◽  
Electron Energy Loss

Local Electronic Structure Of Defects In Gan From Spatially Resolved Electron Energy-Loss Spectroscopy

1997 ◽  
Vol 482 ◽  
Author(s):  
M. K. H. Natusch ◽  
G. A. Botton ◽  
R. F. Broom ◽  
P. D. Brown ◽  
D. M. Tricker ◽  
...  
Keyword(s):  
Optical Properties ◽  
Electronic Structure ◽  
Energy Loss ◽  
Electron Energy ◽  
Electron Energy Loss Spectroscopy ◽  
Crystal Defects ◽  
Vacuum Field ◽  
Spatially Resolved ◽  
Local Electronic Structure ◽  
Electron Energy Loss

AbstractThe optical properties and their modification by crystal defects of wurtzite GaN are investigated using spatially resolved electron energy-loss spectroscopy (EELS) in a dedicated ultra-high vacuum field emission gun scanning transmission electron microscope. The calculated density of states of the bulk crystal reproduces well the features of the measured spectra. The profound effect of a prismatic stacking fault on the local electronic structure is shown by the spatial variation of the optical properties derived from low-loss spectra. It is found that a defect state at the fault appears to bind 1.5 electrons per atom.

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