Reactive Ion Etching (RIE) Induced p- to n-Type Conversion in Extrinsically Doped P-Type hgcdte
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AbstractMercury annealing of reactive ion etching (RIE) induced p- to n-type conversion in extrinsically doped p-type epitaxial layers of HgCdTe (x=0.31) has been used to reconvert n-type conversion sustained during RIE processing. For the RIE processing conditions used (400mT, CH4/H2, 90 W) p- to n-type conversion was observed using laser beam induced current (LBIC) measurements. After a sealed tube mercury anneal at 200°C for 17 hours, LBIC measurements clearly indicated no n-type converted region remained. Subsequent Hall measurements confirmed that the material consisted of a p-type layer, with electrical properties equivalent to that of the initial as-grown wafer (NA-ND=2× 1016 cm−3, μ=350 cm2.V−1.−1).
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1998 ◽
Vol 27
(6)
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pp. 661-667
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1998 ◽
Vol 184-185
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pp. 1219-1222
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1998 ◽
Vol 184-185
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pp. 1219-1222
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2007 ◽
Vol 556-557
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pp. 153-156
1995 ◽
Vol 142
(2)
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pp. 669-671
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1994 ◽
Vol 141
(10)
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pp. 2915-2917
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2000 ◽
Vol 29
(6)
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pp. 837-840
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