scholarly journals In Situ, Real-Time Studies of Film Growth Processes Using Ion Scattering and Direct Recoil Spectroscopy Techniques

1999 ◽  
Vol 569 ◽  
Author(s):  
V.S. Smentkowskiv ◽  
A. R. Krauss ◽  
O. Auciello ◽  
J. Im ◽  
D.M. Gruen ◽  
...  
Keyword(s):  
Real Time ◽  
Mass Spectroscopy ◽  
Film Growth ◽  
Ion Beam ◽  
Time Of Flight ◽  
Analytical Techniques ◽  
Surface Species ◽  
Ion Scattering ◽  
Growth Processes

ABSTRACTTime-of-flight ion scattering and recoil spectroscopy (TOF-ISARS) enables the characterization of the composition and structure of surfaces with 1–2 monolayer specificity. It will be shown that surface analysis is possible at ambient pressures greater than 3 mTorr using TOF-ISARS techniques; allowing for real-time, in situ studies of film growth processes. TOF-ISARS comprises three analytical techniques: ion scattering spectroscopy (ISS), which detects the backscattered primary ion beam; direct recoil spectroscopy (DRS), which detects the surface species recoiled into the forward scattering direction; and mass spectroscopy of recoiled ions (MSRI), which is a variant of DRS capable of isotopic resolution for all surface species - including H and He. The advantages and limitations of each of these techniques will be discussed.The use of the three TOF-ISARS methods for real-time, in situ film growth studies at high ambient pressures will be illustrated. It will be shown that MSRI analysis is possible during sputter deposition. It will be also be demonstrated that the analyzer used for MSRI can also be used for time of flight secondary ion mass spectroscopy (TOF-SIMS) under high vacuum conditions. The use of a single analyzer to perform the complimentary surface analytical techniques of MSRI and SIMS is unique. The dual functionality of the MSRI analyzer provides surface information not obtained when either MSRI or SIMS is used independently.

scholarly journals In Situ, Real-Time Analysis of the Growth of Ferroelectric and Conductive Oxide Heterostructures by a New Time-of-Flight Pulsed Ion Beam Surface Analysis Technique

1994 ◽  
Vol 341 ◽  
Author(s):  
Orlando Auciello ◽  
A. R. Krauss ◽  
Y. Lin ◽  
R. P. H. Chang ◽  
D. M. Gruen
Keyword(s):  
Real Time ◽  
Surface Segregation ◽  
Ion Beam ◽  
Time Of Flight ◽  
Ion Scattering ◽  
Real Time Analysis ◽  
Analysis Technique ◽  
Conductive Oxide ◽  
New Time

AbstractA new time-of-flight ion scattering and recoil spectroscopy (TOF-ISARS) technique has been developed and is now used to perform in situ, real-time analysis of ferroelectric and conductive oxide layers during growth. Initial results presented here show various major effects, namely: (a) RuO2 films on MgO substrates appear to be terminated in O atoms on the top layer located in between Ru atoms lying in the layer underneath (This effect may have major implications for the explanation of the elimination of polarization fatigue demonstrated for RuO2/PZT/RuO2 heterostructure capacitors); (b) deposition of a Ru monolayer on top of a Pb monolayer results in surface segregation of Pb until a complete Pb layer develops over the Ru monolayer; and (c) a Pb/Zr/Ti layered structure yields a top Pb layer with first evidence of the existence of Pb vacancies, which also may have major implications in relation to the electrical characteristics of PZT-based capacitors.

Combined Spectroscopic Ellipsometry and Ion Beam Surface Analysis for In-Situ Real-Time Characterization of Complex Oxide Film Growth

1999 ◽  
Vol 569 ◽  
Author(s):  
A.H. Mueller ◽  
Y. Gao ◽  
E.A. Irene ◽  
O. Auciello ◽  
A.R. Krauss ◽  
...  
Keyword(s):  
Real Time ◽  
Spectroscopic Ellipsometry ◽  
Film Growth ◽  
Ion Beam ◽  
Complex Oxide ◽  
Complex Materials ◽  
Ion Scattering ◽  
Beam Surface

ABSTRACTIn-situ real time characterization of chemically and structurally complex thin films is becoming important as complex materials are finding more applications in electronic devices. To this end, a unique thin film growth and deposition system was constructed combining a multi-target sputter deposition system with spectroscopic ellipsometry and time-of-flight ion scattering and recoil spectroscopy. This system is demonstrated with studies on YBa2Cu3O7−δand BaSrTiO3 films.

Studies of ferroelectric film growth processes using in situ, real-time ion beam analysis

1997 ◽  
Vol 18 (1-4) ◽  
pp. 351-368
Author(s):  
A. R. Krauss ◽  
O. Auciello ◽  
J. Im ◽  
V. Smentkowski ◽  
D. M. Gruen ◽  
...  
Keyword(s):  
Real Time ◽  
Film Growth ◽  
Ion Beam ◽  
Ferroelectric Film ◽  
Growth Processes ◽  
Ion Beam Analysis ◽  
Beam Analysis

ION SCATTERING AND RECOILING SPECTROSCOPY FOR REAL TIME MONITORING OF SURFACE PROCESSES IN A GAS PHASE ATMOSPHERE

2000 ◽  
Vol 07 (05n06) ◽  
pp. 657-659
Author(s):  
T. FUJINO ◽  
M. KATAYAMA ◽  
Y. YAMAZAKI ◽  
S. INOUE ◽  
J.-T. RYU ◽  
...  
Keyword(s):  
Real Time ◽  
Film Growth ◽  
Hydrogen Gas ◽  
Surface Processes ◽  
Ion Scattering ◽  
Real Time Monitoring ◽  
Si Substrates ◽  
Pumping System ◽  
Differential Pumping

Various surface processes, such as thin film growth or etching, are usually performed by introducing various gases into a vacuum chamber. In order to monitor such surface processes in situ, we have developed an ion scattering and recoiling spectroscopy apparatus equipped with a differential pumping system. The system was applied for real time monitoring of hydrogen-mediated growth of Ge films on Si substrates under a hydrogen gas pressure of 10-4 Torr.

scholarly journals Studies of thin‐film growth, adsorption, and oxidation by in situ, real‐time, and ex situ ion beam analysis

1994 ◽  
Vol 12 (4) ◽  
pp. 1557-1564 ◽  
Author(s):  
Yuping Lin ◽  
A. R. Krauss ◽  
O. Auciello ◽  
Y. Nishino ◽  
D. M. Gruen ◽  
...  
Keyword(s):  
Thin Film ◽  
Real Time ◽  
Film Growth ◽  
Ion Beam ◽  
Thin Film Growth ◽  
Ex Situ ◽  
Ion Beam Analysis ◽  
Beam Analysis
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