Defect and Tail States in Microcrystalline Silicon investigated by pulsed ESR

2000 ◽  
Vol 609 ◽  
Author(s):  
P. Kanschat ◽  
H. Mell ◽  
K. Lips ◽  
W. Fuhs
Keyword(s):  
Electron Spin Resonance ◽  
Detailed Analysis ◽  
Electron Spin ◽  
Qualitative Model ◽  
Dangling Bond ◽  
Microcrystalline Silicon ◽  
Band Tail ◽  
Spin Resonance ◽  
Donor States ◽  
Broad Structure

ABSTRACTWe report on a detailed analysis of paramagnetic states in a doping series of microcrystalline silicon, μc-Si:H, by pulsed electron spin resonance. We identify two dangling bond like structures at g = 2.0052 (db1) and g = 2.0043 (db2). Whereas db1 is evenly distributed in the gap, the db2 state is found to be localized in the lower part of the gap. The CE resonance at g ≈ 1.998 is assigned to electrons in conduction band tail states. In p-doped samples, we observe a broad structure CH at g ≈ 2.08 which we identify with holes trapped in valence band tail states. It is shown that the CH state behaves very similar on illumination as the CE resonance. In n-type samples a pair of hyperfine split lines (A ≈ 11 mT) is found which apparently does not originate from 31P-donor states. On the basis of our results we propose a qualitative model for paramagnetic states in μc-Si:H.

High Frequency Electron Spin Resonance Study of Hydrogenated Microcrystalline Silicon

2003 ◽  
Vol 762 ◽  
Author(s):  
Takashi Ehara
Keyword(s):  
Electron Spin Resonance ◽  
Substrate Temperature ◽  
Electron Spin ◽  
Esr Spectra ◽  
Electron Spin Resonance Study ◽  
Dangling Bond ◽  
Microcrystalline Silicon ◽  
W Band ◽  
X Band ◽  
Spin Resonance

AbstractDangling bond defects (DB) in hydrogenated microcrystalline silicon (μc-Si:H) have been studied by X-band (9 GHz) Q-band (33 GHz) and W-band (90 GHz) electron spin resonance (ESR) spectroscopy. In X-band ESR spectra, all the samples showed asymmetric dangling bond defect signal at g = 2.005 – 2.006. The DB signal shape shows little dependence on substrate temperature in the X-band electron spin resonance (ESR) spectra. In the Q-band and W-band ESR spectra, existence of two centers in DB signals is clearly indicated by the shape of the spectra. The Q-band ESR spectra shape reviles that the peak of one center is at g = 2.0055andthe other is around at g = 2.0060. In addition, the DB signal showed dependence on substrate temperature. The dependence of the DB signals can be explained by difference of intensity ratio of the peaks by these two centers. The signal at g = 2.0060 is consistent with the asymmetric ESR signal observed in the microcrystalline silicon embedded in SiO2. W-band ESR measurement indicates that the signal observed at g = 2.0060 is due to single inhomogeneous species and does not consist of plural species.

Spin Resonance Studies on free Electrons and Defects in Microcrystalline Silicon

1994 ◽  
Vol 358 ◽  
Author(s):  
C. Malten ◽  
F. Finger ◽  
P. Hapke ◽  
T. Kulessa ◽  
C. Walker ◽  
...  
Keyword(s):  
Electron Spin Resonance ◽  
Grain Boundaries ◽  
Amorphous Phase ◽  
Electron Spin ◽  
Degree Of Crystallinity ◽  
Microcrystalline Silicon ◽  
Free Electrons ◽  
Conduction Band Offset ◽  
Spin Resonance ◽  
Material Points

ABSTRACTThe effect of micro-doping, defect creation, and non-steady state occupation through optical transitions on the electron spin resonance signals found in undoped and weakly doped microcrystalline silicon with a high degree of crystallinity is investigated. The experimental results are in agreement with the assignment of the resonance at g=1.9983 to conduction electrons in the crystalline grains and the resonanccs around g=2.0052 to dangling bonds in the remaining amorphous phase and at the grain boundaries. The simultaneous presence of both resonances can result from a large conduction band offset between crystalline grains and grain boundaries or the amorphous phase. The presence of conduction electron spin resonance in compensated and even p-type material points also to potential fluctuations. Free electrons in interconnected crystalline grains are in agreement with the weakly activated transport found in µc-Si:H at low temperatures.

Shallow Donor States in InP - Electron-Spin-Resonance Induced Overhauser Shift -

1993 ◽  
Vol 117-118 ◽  
pp. 369-374 ◽  
Author(s):  
Kenji Murakami ◽  
Takasumi Ohyanagi ◽  
Kazusato Hara ◽  
K. Masuda
Keyword(s):  
Electron Spin Resonance ◽  
Electron Spin ◽  
Shallow Donor ◽  
Spin Resonance ◽  
Donor States

Electron spin resonance evidence for the structure of a switching oxide trap: Long term structural change at silicon dangling bond sites in SiO2

1995 ◽  
Vol 67 (15) ◽  
pp. 2179-2181 ◽  
Author(s):  
John F. Conley ◽  
Patrick M. Lenahan ◽  
Aivars J. Lelis ◽  
Timothy R. Oldham
Keyword(s):  
Electron Spin Resonance ◽  
Structural Change ◽  
Electron Spin ◽  
Dangling Bond ◽  
Spin Resonance ◽  
Oxide Trap

Electron Spin Resonance Study of the Dangling Bond in a-Si:H and Porous Silicon

1993 ◽  
Vol 297 ◽  
Author(s):  
T.J. Mc Mahon ◽  
Y. Xiao
Keyword(s):  
Electron Spin Resonance ◽  
Porous Silicon ◽  
Electron Spin ◽  
Electrochemical Etching ◽  
Bond Line ◽  
Electron Spin Resonance Study ◽  
Dangling Bond ◽  
Porous Si ◽  
Spin Resonance ◽  
G Value

We compare the electron spin resonance (ESR) signal of the dangling bond in porous silicon films, produced by electrochemical etching, to the ESR signal from hydrogenated amorphous Si (a-Si:H). The anisotropy of the ESR signal in porous Si showed g values varying as for the Pb Si/SiO2 interface dangling bond. The g value varies from g|| − 2.0020 to gL − 2.0080 with an inhomogeneously broadened line width increasing from 1.8 to 3.8 G. A porous Si ESR powder line, with superhyperfine and strain broadening intrinsic to porous Si, is compared to the a−Si:H dangling bond line. The result is more inhomogeneous broadening of line widths parallel and perpendicular to the dangling bond axis in a-Si:H, and less anisotropy in g|| − gL- No evidence was seen for light-induced metastability on a H-passivated porous Si film.

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