A HgCdTe/CdTe/GaAs/Si Epitaxial Structure
Keyword(s):
X Ray
◽
ABSTRACTFour layer HgCdTe/CdTe/GaAs/Si structures have been prepared by the sequential growth of (100) GaAs on (100) Si by MBE, (100) CdTe on GaAs/Si by congruent evaporation in UHV and (100) HgCdTe on CdTe/GaAs/Si by vapor transport. Infrared transmission, X-ray rocking curves, differential interference contrast microscopy and selected area electron channelling patterns characterize the structures.
1988 ◽
Vol 8
(4)
◽
pp. 1425-1435
◽
2009 ◽
Vol 282
(16)
◽
pp. 3223-3230
◽