Multiscale Modeling of Stress-Mediated Diffusion in Silicon - Volume Tensors

2001 ◽  
Vol 677 ◽  
Author(s):  
W. Windl ◽  
M. S. Daw ◽  
N. N. Carlson ◽  
M. Laudon
Keyword(s):  
Multiscale Modeling ◽  
Vacancy Formation ◽  
Theoretical Treatment ◽  
Stress Dependence ◽  
Defect Diffusion

ABSTRACTIn a previous paper, we presented a general theoretical treatment of the effect of stress on defect diffusion in Si (M. S. Daw, W. Windl, N. N. Carlson, M. Laudon, and M. P. Masquelier, to be published in Phys. Rev. B). In this paper, we discuss the calculation of the parameters governing the stress dependence of the diffusivity, which are volume quantities, and present the fully anisotropic volume tensor for vacancy formation in Si.

scholarly journals Multiscale Modeling of Agglomerated Ceria Nanoparticles: Interface Stability and Oxygen Vacancy Formation

2019 ◽  
Vol 7 ◽  
Author(s):  
Byung-Hyun Kim ◽  
Jolla Kullgren ◽  
Matthew J. Wolf ◽  
Kersti Hermansson ◽  
Peter Broqvist
Keyword(s):  
Oxygen Vacancy ◽  
Multiscale Modeling ◽  
Vacancy Formation ◽  
Ceria Nanoparticles ◽  
Interface Stability ◽  
Oxygen Vacancy Formation

Contrasts of planar defects in reflection electron microscopy

1993 ◽  
Vol 51 ◽  
pp. 1004-1005
Author(s):  
Feng Tsai ◽  
J. M. Cowley
Keyword(s):  
Electron Microscopy ◽  
Surface Defects ◽  
Practical Importance ◽  
Theoretical Treatment ◽  
Crystal Surfaces ◽  
Planar Defects ◽  
Surface Steps ◽  
Surface Reconstructions ◽  
Domain Boundaries ◽  
Reflection Electron Microscopy

Reflection electron microscopy (REM) has been used to study surface defects such as surface steps, dislocations emerging on crystal surfaces, and surface reconstructions. However, only a few REM studies have been reported about the planar defects emerging on surfaces. The interaction of planar defects with surfaces may be of considerable practical importance but so far there seems to be only one relatively simple theoretical treatment of the REM contrast and very little experimental evidence to support its predications. Recently, intersections of both 90° and 180° ferroelectric domain boundaries with BaTiO3 crystal surfaces have been investigated by Tsai and Cowley with REM.The REM observations of several planar defects, such as stacking faults and domain boundaries have been continued by the present authors. All REM observations are performed on a JEM-2000FX transmission electron microscope. The sample preparations may be seen somewhere else. In REM, the incident electron beam strikes the surface of a crystal with a small glancing angle.

Influence of long-term defect diffusion on HgCdTe electronic structure

2004 ◽  
Vol 27 (1-3) ◽  
pp. 403-406
Author(s):  
M. Pociask ◽  
B. Pukowska ◽  
A. Kisiel ◽  
E. M. Sheregii ◽  
N. N. Berchenko
Keyword(s):  
Electronic Structure ◽  
Defect Diffusion

FURTHER CONSIDERATIONS ON THE CALCULATIONS OF SECRETION RATES. A CORRECTION

1961 ◽  
Vol 38 (3) ◽  
pp. 469-472 ◽  
Author(s):  
K. R. Laumas ◽  
J. F. Tait ◽  
S. A. S. Tait
Keyword(s):  
Steady State ◽  
Compartmental Model ◽  
Single Injection ◽  
Previous Treatment ◽  
Urinary Metabolite ◽  
Theoretical Treatment ◽  
Basic Equations ◽  
Special Circumstances ◽  
Secretion Rates

ABSTRACT Reconsideration of the question of the validity of the calculations of the secretion rates from the specificity activity of a urinary metabolite after the single injection of a radioactive hormone has led us to conclude that the basic equations used in a previous theoretical treatment are not generally applicable to the nonisotopic steady state if the radioactive steroid and hormone are introduced into the same compartment. If this is so, in a two compartmental model with metabolism occurring in both pools, it is now shown that the calculation (S = R — τ) is rigorously valid if certain precautions are taken. This is in contrast to the previous treatment which concluded (in certain special circumstances) that the calculation might not be correct. However, if the hormone is secreted in both compartments and the radioactive steroid is injected into only one, then the calculation (S = R — τ) may not be correct in certain circumstances as was previously concluded (Laumas et al. 1961).

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