Thermomechanical Stresses in Copper Interconnect/Low-κ Dielectric Systems

2004 ◽  
Vol 812 ◽  
Author(s):  
Y.-L. Shen ◽  
E. S. Ege

AbstractNumerical simulations of thermal stresses in copper interconnect and low-κ dielectric systems are carried out. The analyses include two- and three-dimensional finite element modeling of the interconnect structure. Various combinations of metal, oxide and polymer-based low-κ dielectric schemes are considered in the simulation. The evolution of stresses and deformation pattern in copper, barrier layers, and the dielectrics are critically assessed.

Tribologia ◽  
2016 ◽  
Vol 266 (2) ◽  
pp. 9-24 ◽  
Author(s):  
Oday I. ABDULLAH ◽  
Laith Abed SABRI ◽  
Wassan S. Abd Al-SAHB

Most of the failures in the sliding systems occur due to the high thermal stresses, which generated at the interface between the contacting surfaces due to sliding between parts, such as friction clutches and brakes. In this paper, the thermal behaviour of a single-disc clutch is investigated. The surface temperatures of the friction clutch disc will be increased during repeated engagements, in some cases, will lead to premature failure of the clutch disc. In order to avoid this kind of failure, it the surface temperature should be calculated with high accuracy to know the maximum working temperature of the friction system. In this work, the temperature distributions are computed during four repeated engagements at regular intervals (5 s) for the same energy dissipation. Three-dimensional finite element models are used to simulate the typical friction clutch disc.


1991 ◽  
Vol 239 ◽  
Author(s):  
E. H. Lingunis ◽  
N. M. Haegel ◽  
N. H. Karam

ABSTRACTThree-dimensional elastic finite element analysis was used to investigate the stress state in patterned GaAs/Si squares with different width to thickness ratios. Quantitative results for stress relief close to free edges were obtained. Features not revealed by previous two-dimensional calculations show the necessity of the three-dimensional treatment. For large areas the calculations give an approximately uniform biaxial stress everywhere, with reduced magnitude close to free edges. This allows for straightforward interpretation of high spatial resolution luminescence spectra and precise stress measurement. Experimental results from low temperature photoluminescence show good agreement with the calculated stresses. Finally, the effects of adjacent layers of different materials on the stress in epitaxial semiconductor thin films is investigated (particularly the case of InP/GaAs/Si) and discussed in conjunction with previous results.


2007 ◽  
Vol 35 (3) ◽  
pp. 226-238 ◽  
Author(s):  
K. M. Jeong ◽  
K. W. Kim ◽  
H. G. Beom ◽  
J. U. Park

Abstract The effects of variations in stiffness and geometry on the nonuniformity of tires are investigated by using the finite element analysis. In order to evaluate tire uniformity, a three-dimensional finite element model of the tire with imperfections is developed. This paper considers how imperfections, such as variations in stiffness or geometry and run-out, contribute to detrimental effects on tire nonuniformity. It is found that the radial force variation of a tire with imperfections depends strongly on the geometrical variations of the tire.


Author(s):  
Marc Freixes ◽  
Marc Arnela ◽  
Joan Claudi Socoró ◽  
Francesc Alías Pujol ◽  
Oriol Guasch

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