Optical Properties of Ordered Ge-Si Atomic-Layer Superlattices

1987 ◽  
Vol 91 ◽  
Author(s):  
T. P. Pearsall ◽  
J. Bevk ◽  
J. C. Bean ◽  
J. M. Bonar ◽  
J. P. Mannaerts

ABSTRACTA systematic study of the band-to-band optical transitions in commensurate strainedlayer superlattices of Ge and Si grown on (001) Si substrates show the presence of new electronic energy bands. Our measurements suggest that superlattice structure on the same scale as the unit cell results in a band structure significantly different from that of a random alloy.

1983 ◽  
Vol 13 (12) ◽  
pp. 2569-2580 ◽  
Author(s):  
P N Ray ◽  
J Chowdhuri ◽  
S Chatterjee

1996 ◽  
Vol 10 (19) ◽  
pp. 931-937 ◽  
Author(s):  
H.F. HU ◽  
K.L. YAO

Starting from the extensional model Hückel Hamiltonian containing the next-neighbor hopping interactions, the energy band structure and their variation have been studied for polydiacetylenes (PDA’s). With the increase of the next-neighbor hopping interaction parameter ρ the results show that: (1) the electronic state symmetry is broken, (2) the locations and the widths of energy bands have been changed, and (3) the energy gap becomes narrower and the total bandwidth broader. Finally, the effect of the nextneighbor hopping interactions on the band-structure is discussed.


1984 ◽  
Vol 30 (4) ◽  
pp. 1711-1719 ◽  
Author(s):  
K. Horn ◽  
B. Reihl ◽  
A. Zartner ◽  
D. E. Eastman ◽  
K. Hermann ◽  
...  

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