Metal / Hydrogenated Amorphous Silicon Interfaces

1987 ◽  
Vol 95 ◽  
Author(s):  
Jerzy Kanicki
Keyword(s):  
Amorphous Silicon ◽  
Schottky Barrier ◽  
Barrier Height ◽  
Hydrogenated Amorphous Silicon ◽  
Carrier Injection ◽  
Metal Work Function ◽  
Consistent Model ◽  
Current Saturation ◽  
Metal Work ◽  
Hydrogenated Amorphous

The contact properties between different metals and hydrogenated amorphous silicon, prepared by various deposition techniques in different laboratories, are reviewed. From these studies the appropriate metallizations have been established for the achievement of Schottky diode, quasi-ohmic or ohmic contact to undoped and doped films. The various characteristic parameters describing Schottky barrier interfaces such as ideality factor, current saturation, contact resistance and barrier height are discussed. The dependence of Schottky barrier height upon the metal work function, measuring and annealing temperature, and optical band-gap are also reported. The minority-carrier injection and series resistance effects on the contact properties of a-Si:H diodes are described. All the results are interpreted in terms of a self-consistent model that exhibits an electrode-limited to bulk-limited transition.

Ohmic and Quasi-Ohmic Contacts to Hydrogenated Amorphous Silicon Thin Films

1986 ◽  
Vol 70 ◽  
Author(s):  
Jerzy Kanicki ◽  
Dan Bullock
Keyword(s):  
Amorphous Silicon ◽  
Barrier Height ◽  
Ohmic Contacts ◽  
Hydrogenated Amorphous Silicon ◽  
Extensive Study ◽  
Silicon Thin Films ◽  
Metal Work Function ◽  
Dominant Conduction Mechanism ◽  
Hydrogenated Amorphous

An extensive study of contacts properties to undoped and doped hydrogenated amorphous silicon, undertaken in our laboratory, has shown that ohmicity and contact quality are very dependent on the reactivity of the metal and the quality of the metal / a-Si:H interface. For example, metals such as Sc, Mg or Ti form exceptionally good ohmic (very low barrier height) contacts, while others like Al, Cu, Mo or V form very poor quasi-ohmic contacts (average barrier height) to undoped films. In addition, metals such as Y, Ho, Hf or Er create fair quasi-ohmic (low barrier height) contacts to undoped films, at room temperature. The barrier height and the magnitude of current density can be adjusted to some degree not only by the proper choice of metal work function but also by changing material bulk resistivity or/and interface quality. Consequently, specific attention is devoted to these parameters which not only determine the quality of ohmic contact but also the dominant conduction mechanism across the barrier.

Hydrogenated amorphous silicon nanowire transistors with Schottky barrier source/drain junctions

2010 ◽  
Vol 97 (14) ◽  
pp. 143509 ◽  
Author(s):  
Kurtis D. Cantley ◽  
Anand Subramaniam ◽  
Ramapriyan R. Pratiwadi ◽  
Herman Carlo Floresca ◽  
Jinguo Wang ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Schottky Barrier ◽  
Silicon Nanowire ◽  
Hydrogenated Amorphous Silicon ◽  
Nanowire Transistors ◽  
Hydrogenated Amorphous

Metastable defect migration under high carrier injection in hydrogenated amorphous silicon p-i-n solar cells

2005 ◽  
Vol 98 (4) ◽  
pp. 044511 ◽  
Author(s):  
U. Dutta ◽  
P. Chatterjee ◽  
S. Tchakarov ◽  
M. Uszpolewicz ◽  
P. Roca i Cabarrocas
Keyword(s):  
Solar Cells ◽  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Carrier Injection ◽  
Defect Migration ◽  
High Carrier ◽  
Hydrogenated Amorphous ◽  
Metastable Defect
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