L-Band SiGe HBT Frequency-Tunable Dual-Bandpass or Dual-Bandstop Differential Amplifiers Using Varactor-Loaded Series and Parallel LC Resonators

2012 ◽  
Vol E95.C (12) ◽  
pp. 1839-1845 ◽  
Author(s):  
Kazuyoshi SAKAMOTO ◽  
Yasushi ITOH
2012 ◽  
Vol 2012 ◽  
pp. 1-7
Author(s):  
Kazuyoshi Sakamoto ◽  
Yasushi Itoh

A dual-band SiGe HBT frequency-tunable and phase-shifting differential amplifier has been developed for the future active phased array antennas with a multiband, multibeam, and multitarget tracking operation. The amplifier uses varactor-loaded, stacked LC resonators in the design of the output circuit in order to provide frequency-tunable and phase-shifting capabilities for dual frequencies. By utilizing the varactor-loaded LC resonator, which has a variable resonant frequency and a large insertion phase variation, frequency-tunable and phase-shifting performances become available. Moreover, by using the stacked configuration, the frequency and insertion phase can be varied independently for dual frequencies. A dual-band SiGe HBT differential amplifier has achieved a lower-frequency tuning range of 0.56 to 0.7 GHz for a higher fixed frequency of 0.97 GHz as well as a higher-frequency tuning range of 0.92 to 1.01 GHz for a lower fixed frequency of 0.63 GHz. A lower-frequency phase variation of 99° and a higher-frequency phase variation of 90.3° have been accomplished at 0.63 and 0.97 GHz, respectively. This is the first report on the dual-band differential amplifier with frequency-tunable and phase-shifting capabilities.


2009 ◽  
Vol 1 (4) ◽  
pp. 285-292 ◽  
Author(s):  
Masaki Shirata ◽  
Toshio Shinohara ◽  
Minoru Sato ◽  
Yasushi Itoh

An L-band frequency and rejection-level tunable SiGe HBT differential amplifier with dual stopband is presented. To achieve frequency and rejection-level tunable performance, dual LCR-tank circuit with an active load is incorporated into the design of the series feedback loops of the differential amplifier. The active load consists of a varactor diode represented as a variable C and a common-emitter transistor represented as a variable R. The frequency and rejection level can be tuned independently by controlling a cathode bias voltage of the varactor diode or a base bias voltage of the transistor. The implemented 0.35 μm SiGe HBT amplifier with dual stopband demonstrates a frequency tuning of 0.53–1.16 GHz and a rejection-level variation up to 9.5 dB. The input and output return losses are better than 17.5 and 11 dB over 0.2–1.5 GHz, respectively. The measured P1dB is+3 dBm and IIP3 is 0 dBm with Vcc = 6 V and Ic = 8 mA.


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