scholarly journals Perpendicular Exchange Bias of Co/Ni mUltilayers Adjacent to Antiferromagnetic FeRh Layer

Author(s):  
Soyoung Jekal ◽  
Dao Phoung

The perpendicular exchange bias effect is observed in the ferromagnetic Co/Ni multilayers adjacent to the antiferromagnetic FeRh layer. It is found that as the antiferromagnetic FeRh thickness increases from 10 Å to 50 Å, the hysteresis loop is gradually changed from the symmetric shape to the asymmetric shape shifted by some amount corresponding to the exchange-biased field at the thickness of 25 Å. Also, the magnetic domain observation experiment confirms that the domain reversals in the increasing and the decreasing field regions of the sample with the thickness of 50 Å exhibit the same single domain wall motion even though they have the different coercivities.

2015 ◽  
Vol 1754 ◽  
pp. 31-36 ◽  
Author(s):  
Toshimasa Suzuki ◽  
Koichi Kawahara ◽  
Haruka Tanaka ◽  
Kimihiro Ozaki

ABSTRACTIn this study, we conducted the in-situ observations of the magnetic domain structure change in Nd2Fe14B magnets at elevated temperature by transmission electron microscopy (TEM) / Lorentz microscopy. The in-situ observations in Nd2Fe14B magnets revealed that the magnetization reversal easily occurred at the elevated temperature. At more than 180°C, the magnetic domain wall motion could be observed by applying the magnetic field of less than 20 mT. The motion of the magnetic domain wall was discontinuous and the domain wall jumped to one grain boundary to the neighboring grain boundary at 180°C. On the other hand, the continuous domain wall motion within grain interior as well as discontinuous domain wall motion was observed at 225°C, and some grain boundaries showed still strong pinning effect even at 225°C. The temperature dependence of the pinning effect of grain boundaries would not uniform.


2009 ◽  
Vol 103 (19) ◽  
Author(s):  
Lars Bocklage ◽  
Benjamin Krüger ◽  
Toru Matsuyama ◽  
Markus Bolte ◽  
Ulrich Merkt ◽  
...  

2013 ◽  
Vol 62 (10) ◽  
pp. 1534-1538
Author(s):  
M. Hari ◽  
K. Wang ◽  
S. J. Bending ◽  
E. Arac ◽  
D. Atkinson ◽  
...  

2014 ◽  
Vol 115 (17) ◽  
pp. 17D508 ◽  
Author(s):  
S. Fukami ◽  
M. Yamanouchi ◽  
Y. Nakatani ◽  
K.-J. Kim ◽  
T. Koyama ◽  
...  

2008 ◽  
Vol 100 (3) ◽  
Author(s):  
A. Pérez-Junquera ◽  
V. I. Marconi ◽  
A. B. Kolton ◽  
L. M. Álvarez-Prado ◽  
Y. Souche ◽  
...  

Spintronics ◽  
2021 ◽  
pp. 145-161
Author(s):  
Puja Dey ◽  
Jitendra Nath Roy

2009 ◽  
Vol 152-153 ◽  
pp. 143-146 ◽  
Author(s):  
A. Logginov ◽  
G. Meshkov ◽  
A. Nikolaev ◽  
E. Nikolaeva ◽  
A. Pyatakov ◽  
...  

The room temperature magnetoelectric effect was observed in epitaxial iron garnet films that appeared as magnetic domain wall motion induced by electric field. The films grown on gadolinium-gallium garnet substrates with various crystallographic orientations were examined. The effect was observed in (210) and (110) films and was not observed in (111) films. Dynamic observation of the domain wall motion in 800 kV/cm electric field pulses gave the domain wall velocity in the range 30÷50 m/s. Similar velocity was achieved in magnetic field pulse about 50 Oe.


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