scholarly journals Preparation of Homo and Hetero Multilayer YSZ Thin Films by Ultrasonic Spray ICP Flash Evaporation Method

1998 ◽  
Vol 106 (1231) ◽  
pp. 312-316 ◽  
Author(s):  
Atsushi SAIKI ◽  
Yasuhiro FUJII ◽  
Osamu SAKURAI ◽  
Naoki WAKIYA ◽  
Kazuo SHINOZAKI ◽  
...  
2007 ◽  
Vol 58 (8-9) ◽  
pp. 782-785 ◽  
Author(s):  
J. Dheepa ◽  
R. Sathyamoorthy ◽  
S. Velumani

1993 ◽  
Vol 101 (1180) ◽  
pp. 1423-1426
Author(s):  
Osamu SAKURAI ◽  
Kazumasa KUMAGAI ◽  
Nobuo KIEDA ◽  
Atsushi OGURA ◽  
Kazuo SHINOZAKI ◽  
...  

Author(s):  
И.Х. Мамедов ◽  
Д.Г. Араслы ◽  
Р.Н. Рагимов ◽  
А.А. Халилова

Raman spectra of bulk samples of the InSb-MnSb eutectic composite and their thin films prepared by the flash evaporation method have been studied. In the Raman spectra observed TO and LO modes at frequencies of 179.5 cm-1 and 192.4 cm-1 correspond to InSb compound and also the peaks at frequencies 122 cm-1, 127 cm-1, 167 cm-1, 211 cm-1, 245.5 cm-1 correspond to theoretical data for MnSb as is well known from literature. The TO mode in the Raman spectra for films is shifted toward lower energies (178 cm-1), but the LO mode is higher (196 cm-1). The high-frequency shift of the LO mode in the composite with compared its value for InSb is probably due to the presence of deformation at the matrix-inclusion interface, as well as the contribution by surface phonons scattering.


2011 ◽  
Vol 287-290 ◽  
pp. 2434-2437
Author(s):  
Xing Kai Duan ◽  
Yue Zhen Jiang

N-type Bi2(Te0.95Se0.05)3thermoelectric thin films with thickness 800 nm have been deposited on glass substrates by flash evaporation method at 473 K. The structures, morphology of the thin films were characterized by X-ray diffraction and field emission scanning electron microscope, respectively. Thermoelectric properties of the thin films have been evaluated by measurements of Seebeck coefficient and electrical resistivity at 300 K. Annealing effect on Seebeck coefficient and electrical resistivity of the thin films was examined in the temperature range 373–573 K. When annealed at 473 K for 1 h, Seebeck coefficient and electrical resistivity are –180 μV/K and 2.7 mΩcm, respectively. Thermoelectric power factor is improved to 12 µW/cmK2.


2007 ◽  
Vol 441 (1-2) ◽  
pp. 246-250 ◽  
Author(s):  
M. Takashiri ◽  
T. Shirakawa ◽  
K. Miyazaki ◽  
H. Tsukamoto

2007 ◽  
Vol 61 (22) ◽  
pp. 4341-4343 ◽  
Author(s):  
Xingkai Duan ◽  
Junyou Yang ◽  
Wen Zhu ◽  
Xi'an Fan ◽  
Chengjing Xiao

2001 ◽  
Vol 36 (8-10) ◽  
pp. 1155-1171 ◽  
Author(s):  
M. Oszwaldowski ◽  
T. Berus ◽  
J. Szade ◽  
K. Józwiak ◽  
I. Olejniczak ◽  
...  

Sign in / Sign up

Export Citation Format

Share Document