Комбинационное рассеяние света в эвтектическом композите InSb-MnSb

Raman spectra of bulk samples of the InSb-MnSb eutectic composite and their thin films prepared by the flash evaporation method have been studied. In the Raman spectra observed TO and LO modes at frequencies of 179.5 cm-1 and 192.4 cm-1 correspond to InSb compound and also the peaks at frequencies 122 cm-1, 127 cm-1, 167 cm-1, 211 cm-1, 245.5 cm-1 correspond to theoretical data for MnSb as is well known from literature. The TO mode in the Raman spectra for films is shifted toward lower energies (178 cm-1), but the LO mode is higher (196 cm-1). The high-frequency shift of the LO mode in the composite with compared its value for InSb is probably due to the presence of deformation at the matrix-inclusion interface, as well as the contribution by surface phonons scattering.

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Darstellung und Schwingungsspektren von Alkyl-und Rhodanohydrohexaboraten / Preparation and Vibrational Spectra of Alkyl and Rhodano Hydrohexaborates

Zeitschrift für Naturforschung B ◽

10.1515/znb-1988-1019 ◽

1988 ◽

Vol 43 (10) ◽

pp. 1327-1331 ◽

Cited By ~ 5

Author(s):

A Heinrich ◽

W Preetz

Keyword(s):

Frequency Shift ◽

Raman Spectra ◽

Organic Solvents ◽

Vibrational Spectra ◽

High Frequency ◽

Acidity Constants ◽

High Frequency Shift ◽

Basic Solutions ◽

Stretching Vibrations ◽

Ir And Raman

Treatment of B6H62- with iodoalkanes and (SCN)2 in organic solvents affords the monosubstituted protonated hexaborates RB6H6-, R = CH3, C2H5< C3H7, C4H9, C8H17 and SCN, respectively. The acidity constants of these weak Brönsted acids range for the alkylated species from 8.8 to 9.6, and for R = SCN the pka value is ~5. From basic solutions the salts Cs2RB6H5 can be precipitated, which show band patterns in the IR and Raman spectra typical for monosubstituted hydrohexaborates. The protonated compounds RB6H6- are distinguished from the corresponding Brönsted bases RB6H52- by a high frequency shift of the BH stretching vibrations in the order of 100 cm-1. For Cs2(SCN)B6H5, S coordination of SCN- is supposed because of the high frequency of νCN: 2144 cm-1.

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Applications of the matrix-assisted pulsed laser evaporation method for the deposition of organic, biological and nanoparticle thin films: a review

Applied Physics A ◽

10.1007/s00339-011-6600-0 ◽

2011 ◽

Vol 105 (3) ◽

pp. 565-582 ◽

Cited By ~ 53

Author(s):

Anna Paola Caricato ◽

Armando Luches

Keyword(s):

Thin Films ◽

Pulsed Laser ◽

Laser Evaporation ◽

Evaporation Method ◽

The Matrix

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Characterization of Bismuth Telluride thin films — Flash evaporation method

Materials Characterization ◽

10.1016/j.matchar.2006.11.027 ◽

2007 ◽

Vol 58 (8-9) ◽

pp. 782-785 ◽

Cited By ~ 21

Author(s):

J. Dheepa ◽

R. Sathyamoorthy ◽

S. Velumani

Keyword(s):

Thin Films ◽

Bismuth Telluride ◽

Flash Evaporation ◽

Evaporation Method

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Preparation of Ni-Zn Ferrite Thin Films by ICP Flash Evaporation Method

Journal of the Ceramic Society of Japan ◽

10.2109/jcersj.101.1423 ◽

1993 ◽

Vol 101 (1180) ◽

pp. 1423-1426

Author(s):

Osamu SAKURAI ◽

Kazumasa KUMAGAI ◽

Nobuo KIEDA ◽

Atsushi OGURA ◽

Kazuo SHINOZAKI ◽

...

Keyword(s):

Thin Films ◽

Flash Evaporation ◽

Evaporation Method ◽

Zn Ferrite ◽

Ferrite Thin Films

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Structural and thermoelectric properties of fine-grained Bi0.4Te3.0Sb1.6 thin films with preferred orientation deposited by flash evaporation method

Thin Solid Films ◽

10.1016/j.tsf.2007.12.130 ◽

2008 ◽

Vol 516 (18) ◽

pp. 6336-6343 ◽

Cited By ~ 48

Author(s):

M. Takashiri ◽

K. Miyazaki ◽

H. Tsukamoto

Keyword(s):

Thin Films ◽

Thermoelectric Properties ◽

Preferred Orientation ◽

Flash Evaporation ◽

Evaporation Method ◽

Fine Grained

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Raman Spectra Study on Multilayered Compositional Graded (Ba0.8Sr0.2)(Ti1-xZrx)O3 Thin Films

Key Engineering Materials ◽

10.4028/www.scientific.net/kem.280-283.1909 ◽

2007 ◽

Vol 280-283 ◽

pp. 1909-1912 ◽

Cited By ~ 2

Author(s):

Can Wang ◽

Bo Lin Cheng ◽

S.Y. Wang ◽

S.Y. Dai ◽

Zhao Hui Chen

Keyword(s):

Thin Films ◽

Raman Spectra ◽

High Frequency ◽

Raman Peak ◽

Cubic Phase ◽

Compositional Gradient ◽

Small Shift ◽

Graded Layers ◽

In Series ◽

Ceramic Targets

Compositional graded thin films of (Ba0.8Sr0.2)(Ti1-xZrx)O3 (BSTZ) are grown on MgO by pulsed laser deposition technique with four BSTZ ceramic targets. Gradients of composition are achieved by artificially tailoring composition in multilayered thin films to form compositional graded layers (CGL). In each CGL four individual layers of BSTZ with x = 0.36, 0.18, 0.08 and 0 are grown^in series with equal thickness. Three kinds of CGL samples comprising one, two or four CGLs have been elaborated with the same total thickness by varying the thickness of each CGL. Raman spectra show existence of tetragonal structure in all the multilayered BSTZ thin films. Raman peak at 535 cm-1 shifts to high frequency with increasing of compositional gradient, and the peak at 750 cm-1 also shows a small shift to high frequency. Moreover, other Raman peak is observed at about 830 cm-1, which is associated with phonon mode of cubic phase, and such peak shifts towards lower frequency with increasing of compositional gradient. The shift of Raman peak is related to variation of internal stress in BSTZ thin film due to increasing compositional gradient.

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Microstructure and thermoelectric properties of Sn-doped Bi2Te2.7Se0.3 thin films deposited by flash evaporation method

Thin Solid Films ◽

10.1016/j.tsf.2010.11.013 ◽

2011 ◽

Vol 519 (10) ◽

pp. 3007-3010 ◽

Cited By ~ 13

Author(s):

X.K. Duan ◽

Y.Z. Jiang

Keyword(s):

Thin Films ◽

Thermoelectric Properties ◽

Flash Evaporation ◽

Evaporation Method

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Annealing Effects on Microstructure and Thermoelectric Properties of Bi2(Te0.95Se0.05)3 Thin Films Prepared by Flash Evaporation Method

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.287-290.2434 ◽

2011 ◽

Vol 287-290 ◽

pp. 2434-2437

Author(s):

Xing Kai Duan ◽

Yue Zhen Jiang

Keyword(s):

Thin Films ◽

Electrical Resistivity ◽

Seebeck Coefficient ◽

Thermoelectric Properties ◽

Flash Evaporation ◽

Thermoelectric Power Factor ◽

Evaporation Method ◽

Glass Substrates ◽

Annealing Effects ◽

Thermoelectric Thin Films

N-type Bi2(Te0.95Se0.05)3thermoelectric thin films with thickness 800 nm have been deposited on glass substrates by flash evaporation method at 473 K. The structures, morphology of the thin films were characterized by X-ray diffraction and field emission scanning electron microscope, respectively. Thermoelectric properties of the thin films have been evaluated by measurements of Seebeck coefficient and electrical resistivity at 300 K. Annealing effect on Seebeck coefficient and electrical resistivity of the thin films was examined in the temperature range 373–573 K. When annealed at 473 K for 1 h, Seebeck coefficient and electrical resistivity are –180 μV/K and 2.7 mΩcm, respectively. Thermoelectric power factor is improved to 12 µW/cmK2.

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Thioglycolic Acid FTIR Spectra on Ag2S Quantum Dots Interfaces

Materials ◽

10.3390/ma13040909 ◽

2020 ◽

Vol 13 (4) ◽

pp. 909 ◽

Cited By ~ 2

Author(s):

Tamara Kondratenko ◽

Oleg Ovchinnikov ◽

Irina Grevtseva ◽

Mikhail Smirnov ◽

Oksana Erina ◽

...

Keyword(s):

Quantum Dots ◽

Frequency Shift ◽

High Frequency ◽

Thioglycolic Acid ◽

Low Frequency ◽

Ftir Spectra ◽

Ionic Form ◽

Exciton Luminescence ◽

Recombination Luminescence ◽

High Frequency Shift

The mechanism features of colloidal quantum dots (QDs) passivation with thioglycolic acid molecules (TGA) for cases of different luminescent properties is considered using FTIR. This problem is considered based on FTIR spectra analysis for various ionic forms of TGA. Experimental TGA molecules FTIR spectra is interpreted, basing on the data on modeling of TGA vibrational modes, realized in the framework of density functional method (DFT /B3LYP/6-31+G(d)) taking into account the vibrations anharmonicity of every functional group. This approach provides a significant improvement in the agreement between the experimental and calculated data. FTIR spectra of Ag 2 S/TGA QDs with exciton and recombination luminescence are differ from each other and B “freeB” TGA molecules. The ν ( S − H ) TGA peak (2559 cm − 1 ) disappears in FTIR spectra of Ag 2 S/TGA QD samples. This fact indicates the interactions between TGA thiol group and dangling bonds of Ag 2 S nanocrystals. Ag 2 S QDs passivation with TGA molecules leads to emergence ν a s (COO − ) (1584 cm − 1 ) and ν s (COO − ) (1387 cm − 1 ) peaks. It indicates TGA adsorption in ionic form. For Ag 2 S/TGA QDs with exciton luminescence we observed (a) significant low-frequency shift of ν s (COO − ) peak from 1388 cm − 1 to 1359 cm − 1 and high-frequency shift of ν a s (COO − ) peak from 1567 cm − 1 to 1581 cm − 1 ; (b) change in the ratio of intensities of ν a s (COO − ) and ν s (COO − ) vibrations. This feature is caused by the change in the symmetry of TGA molecules due to passivation of Ag 2 S quantum dots.For Ag 2 S/TGA QDs with recombination luminescence, the insignificant high-frequency shift of 7–10 cm − 1 for ν a s (COO − ) at 1567 cm − 1 and low-frequency shift of 3–5 cm − 1 for ν s (COO − ) at 1388 cm − 1 , probably caused by the interaction of thiol with Ag 2 S surface is observed. Using FTIR spectra, it was found that IR luminescence photodegradation is also accompanied by changes in the thioglycolic acid molecules, which capped Ag 2 S QDs. In the case of Ag 2 S QDs with exciton luminescence, the degradation process is non-reversible. It is accompanied by TGA photodegradation with the formation of α -thiol-substituted acyl radical (S-CH 2 -CO • ) TGA.

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