Effect of A-site off-stoichiometry on ferroelectric and piezoelectric properties of BaTiO3–Bi(Mg1/2Ti1/2)O3–BiFeO3 ceramics

Lead-free piezoelectric ceramics Sr2Bi4-xGdxTi5O18 were prepared by conventional solid-state reaction method. Pure bismuth layered structural ceramics with uniform gain size were obtained in all samples. The effect of Gd-doping on the dielectric, ferroelectric and piezoelectric properties of Sr2Bi4Ti5O18 ceramics were also investigated. It was found that that Gd3+ dopant gradually decreased the Curie temperature (Tc) with the lower dielectric loss (tand) of SBTi ceramics. In addition, Gd-doping with appropriate content improved the ferroelectric and piezoelectric properties of the SBTi ceramics. The piezoelectric constant (d33) of the Sr2Bi3.9Gd0.1Ti5O18 ceramic reached the maximum value, which is 22 pC/N. The results showed that the Sr2Bi4-xGdxTi5O18 ceramic was a promising lead-free piezoelectric material.

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Transferred PMN-PT Thick Film on Conductive Silver Epoxy

Materials ◽

10.3390/ma11091621 ◽

2018 ◽

Vol 11 (9) ◽

pp. 1621 ◽

Cited By ~ 1

Author(s):

Tao Zhang ◽

Jun Ou-Yang ◽

Xiaofei Yang ◽

Benpeng Zhu

Keyword(s):

Thick Film ◽

Silicon Substrate ◽

Chemical Method ◽

Piezoelectric Properties ◽

Sol Gel ◽

Wet Chemical Method ◽

Chemical Route ◽

Wet Chemical ◽

Silver Epoxy ◽

Ferroelectric And Piezoelectric Properties

Approximately 25 μm Pb(Mg1/3Nb2/3)O3–PbTiO3 (PMN-PT) thick film was synthesized based on a sol-gel/composite route. The obtained PMN-PT thick film was successfully transferred from the Silicon substrate to the conductive silver epoxy using a novel wet chemical method. The mechanism of this damage free transfer was explored and analyzed. Compared with the film on Silicon substrate, the transferred one exhibited superior dielectric, ferroelectric and piezoelectric properties. These promising results indicate that transferred PMN-PT thick film possesses the capability for piezoelectric device application, especially for ultrasound transducer fabrication. Most importantly, this chemical route opens a new path for transfer of thick film.

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The Effect of (Li,Ce) Doping in Aurivillius Phase Material Na0. 5Bi4.5Ti4O15

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.146-147.89 ◽

2010 ◽

Vol 146-147 ◽

pp. 89-92

Author(s):

Zhi Gang Gai ◽

Yuan Yuan Feng ◽

Jin Feng Wang ◽

Hong Wu

Keyword(s):

Piezoelectric Coefficient ◽

Piezoelectric Properties ◽

Aurivillius Phase ◽

Promising Candidate ◽

High Tc ◽

Ce Modification ◽

A Site ◽

Site Vacancy ◽

Dielectric And Piezoelectric Properties ◽

State Processing

Na0.5Bi4.5Ti4O15-based materials with A-site vacancy were synthesized using conventional solid state processing. The (Li,Ce) modification of Na0.5Bi4.5Ti4O15-based materials resulted in the obvious improvement of the piezoelectric activity and dielectric permittivity. The dielectric and piezoelectric properties of Na0.5Bi4.5Ti4O15-based ceramics exhibiting a very stable temperature behavior, together with its high TC ~641oC, excellent piezoelectric coefficient ~28pC/N and very low temperature coefficient of resonant frequency, making the (Li,Ce) modified Na0.5Bi4.5Ti4O15-based ceramics a promising candidate for high temperature applications.

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