scholarly journals Magnetic Field Sensor Using Asymmetric Giant Magnetoimpedance Effect Created by Micro Magnets

Author(s):  
Tekin Izgi ◽  
M. Pektas ◽  
V.S. Kolat ◽  
N. Bayri ◽  
S. Atalay

Abstract A magnetic field sensor was developed using asymmetric giant magnetoimpedance (AGMI) effect. Amorphous ferromagnetic (Fe0.06Co0.94) 72.5Si12.5B15 wires were used in this study. The 2 cm long wire showed about 88 % and the 7 cm long wire showed about 197 % giant magnetoimpedance effect. When two micro magnets were placed 1 cm away from the ends of the wire, a distortion in two peak shapes of the GMI curve was observed and asymmetry was created by micro magnets and 7 cm long wire showed about 148 % AGMI effect. A simple and a new approach was designed to develop a magnetic field sensor, in the design circuit two signal generators were used to arrange linearity and dc offset in the output signal. The circuit output showed good linearity and zero hysteresis at ±250 A/m and ± 50 A/m magnetic field regions for 2cm wires long and 7 cm wires long, respectively.

Author(s):  
Alexander Osadchuk ◽  
Vladimir Osadchuk ◽  
Iaroslav Osadchuk

Based on the consideration of physical processes in a tunnel-resonant diode under the action of a magnetic field, the construction of an autogenerating magnetic field sensor with a frequency output signal is proposed. The use of devices with negative differential resistance makes it possible to significantly simplify the design of magnetic field sensors in the entire RF frequency range. Depending on the operating modes of the sensor, an output signal can be obtained in the form of harmonic oscillations, as well as in the form of pulse oscillations of a special form. The study of the characteristics of the magnetic field sensor is based on the complete equivalent circuit of the tunnel-resonant diode. The equivalent circuit takes into account both the capacitive and inductive properties of the tunneling resonant diode. The inductive component exists under any operating conditions, as a result of the fact that the current flowing through the device is always lagging behind the voltage that caused it, which corresponds to the inductive response of a tunnel-resonant diode.


2021 ◽  
Vol 31 (5) ◽  
pp. 1-5
Author(s):  
Ivan P. Nevirkovets ◽  
Mikhail A. Belogolovskii ◽  
Oleg A. Mukhanov ◽  
John B. Ketterson

2021 ◽  
Vol 168 ◽  
pp. 112467
Author(s):  
Andre Torres ◽  
Karel Kovarik ◽  
Tomas Markovic ◽  
Jiri Adamek ◽  
Ivan Duran ◽  
...  

Author(s):  
Xue-Peng Jin ◽  
Hong-Zhi Sun ◽  
Shuo-Wei Jin ◽  
Wan-Ming Zhao ◽  
Jing-Ren Tang ◽  
...  

Optik ◽  
2018 ◽  
Vol 157 ◽  
pp. 315-318 ◽  
Author(s):  
Jiahong Zhang ◽  
Xiaorong Wan ◽  
Yingna Li ◽  
Zhengang Zhao ◽  
Chuan Li

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